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Datasheet 9014 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
19014NPN SILICON TRANSISTOR

-16 -
TIP
TIP
transistor
29014NPN SILICON TRANSISTOR

9014 NPN SILICON TRANSISTOR TO 92 FEATURES Power dissipation PCM : 0.4 W Tamb=25 Collector current A ICM : 0.1 Collector-base voltage V V(BR)CBO : 50 1.EMITTER 2.BASE 3.COLLECTOR 1 2 3 ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage E
Wing Shing Computer Components
Wing Shing Computer Components
transistor
39014Quad Exclusive OR Gate

Fairchild
Fairchild
gate
49014CNPN Silicon Transistor

UTC 9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation. (450mW) *Excellent hFE linearity. *Complementary to UTC 9015 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwis
Unisonic Technologies
Unisonic Technologies
transistor
59014MSILICON NPN TRANSISTOR
FOSHAN BLUE ROCKET
FOSHAN BLUE ROCKET
transistor


901 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
19011MSilicon NPN transistor

9011M Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.  特征 / Features PC 大。 High PC. 用途 / Applications 用作 AM 变频,AM/FM 中放及一般放大。 AM converter, AM/FM IF amplifier
FOSHAN BLUE ROCKET
FOSHAN BLUE ROCKET
transistor
29012NAND GATES/HEX INVERTERS

ETC
ETC
gate
39012PNP SILICON EPITAXIAL TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 9012 PNP SILICON EPITAXIAL TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION  FEATURES *High total power dissipation. (625mW) *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC 9013  ORDERING INFORM
Unisonic Technologies
Unisonic Technologies
transistor
49012HPNP EPITAXIAL SILICON TRANSISTOR

UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. (625mW) *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC 9013 1 TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MA
Unisonic Technologies
Unisonic Technologies
transistor
59012MSilicon PNP transistor

9012M Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.  特征 / Features PC 、IC 大,hFE 特性极好,与 9013M 互补。 High PC and IC, Excellent hFE linearity, complementary pair with 9013M.
FOSHAN BLUE ROCKET
FOSHAN BLUE ROCKET
transistor
69013NPN SILICON TRANSISTOR

9013 NPN SILICON TRANSISTOR TO 92 FEATURES 特 征 1.EMITTER 发 射 极 Power dissipation PCM : 0.625 Collector current ICM : 0.5 Collector-base voltage V(BR)CBO : 45 最大耗散功率 2.BASE W A Tamb=25 基 极 3.COLLECTOR 最大集电极电流 集 电 极 1 2 3 集电极--基极�
Wing Shing Computer Components
Wing Shing Computer Components
transistor
79013Transistor, NPN Silicon Type

UNISONIC TECHNOLOGIES CO., LTD 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION  FEATURES * High total power dissipation. (625mW) * High collector current. (500mA) * Excellent hFE linearity. * Complementary to UTC 9012 1 TO-92  OR
Unisonic Technologies
Unisonic Technologies
transistor



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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