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9013 даташит ( Datasheet PDF )


9013 Datasheet PDF ( Даташиты, Даташиты )

Номер Номер в каталоге Описание Производители PDF
3 9013   NPN SILICON TRANSISTOR

9013 NPN SILICON TRANSISTOR TO 92 FEATURES 特 征 1.EMITTER 发 射 极 Power dissipation PCM : 0.625 Collector current ICM : 0.5 Collector-base voltage V(BR)CBO : 45 最大耗散功率 2.BASE W A Tamb=25 基 极 3.COLLECTOR 最大集电极电流 集 电 极 1 2 3 集电极--基极击穿电压 V ELECTRICAL CHARACTERISTICS 电 Parameter 参 数 Collector-base breakdown voltage 集 电 极 - - 基 极 击 穿 电 压 Collector-emitter breakdown voltage 集 电 极 - - 发 射 极 击 穿 电 压 Emitter-
Wing Shing Computer Components
Wing Shing Computer Components
9013 pdf Даташит
2 9013   NPN SILICON EPITAXIAL TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION  FEATURES * High total power dissipation. (625mW) * High collector current. (500mA) * Excellent hFE linearity. * Complementary to UTC 9012 1 TO-92  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 9013L-x-T92-B 9013G-x-T92-B TO-92 9013L-x-T92-K 9013G-x-T92-K TO-92 Note: Pin assignment: E: Emitter B: Base C: Collector Pin Assignment 123 EBC EB
Unisonic Technologies
Unisonic Technologies
9013 pdf Даташит
1 9013M   Silicon NPN transistor

9013M Rev.D Nov.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.  特征 / Features PC 大,hFE 高且特性好,与 9012M 互补。 High PC and hFE, excellent hFE linearity, complementary pair with 9012M.  用途 / Applications 用于收音机推挽功放。 Amplifier of portable radios in class B push-pull operation.  内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 3 2 1 PIN1:Emitter PIN 2:Base PIN 3
FOSHAN BLUE ROCKET
FOSHAN BLUE ROCKET
9013M pdf Даташит


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Номер в каталоге Описание Производители PDF
CD4515BC

The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors. These circuits are primarily used in decoding applications where low power dissipation and/or high noise immunity is required.

Fairchild Semiconductor
Fairchild Semiconductor
pdf
GUVA-S12SD

This electronic part is an UV-B Sensor.

ROITHNER
ROITHNER
pdf
HV101WU1-1E6

HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices. This module has a 10.1 inch diagonally measured active area with WUXGA resolutions (1920 horizontal by 1200 vertical pixel array).

HYDIS
HYDIS
pdf
KTD1145

This electronic part is an EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC
pdf

На первой странице data sheets приводятся:
свойства компонента (features), его основные параметры (quick reference data), обозначение на принципиальных схемах (symbol), краткое описание (general description).



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