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85T03 даташитФункция этой детали – «PDF». |
Показать результаты поиска |
| Номер в каталоге | Производители | Описание | |
| 85T03GH |  APE |
AP85T03GH AP85T03GH/J
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Low Gate Charge
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
D
BVDSS RDS(ON) ID
30V 6mΩ 75A
▼ Simple Drive Requirement ▼ Fast Switching G S
Description
The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP85T03GJ) is available for low-profile applications.
G D
G D S
TO-252(H)
S
TO-251 |
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Это результат поиска, начинающийся с "85T03", "85T0" |
| Номер в каталоге | Производители | Описание | |
| AP85T03GH |  Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET AP85T03GH/J
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Low Gate Charge
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
D
BVDSS RDS(ON) ID
30V 6mΩ 75A
▼ Simple Drive Requirement ▼ Fast Switching G S
Description
The TO-252 package is widely |
 |
| AP85T03GH-HF | Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant
AP85T03GH/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D BVDSS RDS(ON)
30V 6mΩ
G ID 75A
S
Description
AP85T03 series |
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| AP85T03GH-HF-3 | Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp.
AP85T03GH/J-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Low Gate Charge Fast Switching Characteristics RoHS-compliant, halogen-free G S D
BV DSS R DS(ON) ID
30V 6mΩ 75A
Description
Advanced Power MOSFETs from APEC |
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| AP85T03GJ | Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET AP85T03GH/J
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Low Gate Charge
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
D
BVDSS RDS(ON) ID
30V 6mΩ 75A
▼ Simple Drive Requirement ▼ Fast Switching G S
Description
The TO-252 package is widely |
|
| AP85T03GJ-HF | Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant
AP85T03GH/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D BVDSS RDS(ON)
30V 6mΩ
G ID 75A
S
Description
AP85T03 series |
|
| AP85T03GJ-HF-3 | Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp.
AP85T03GH/J-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Low Gate Charge Fast Switching Characteristics RoHS-compliant, halogen-free G S D
BV DSS R DS(ON) ID
30V 6mΩ 75A
Description
Advanced Power MOSFETs from APEC |
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Последние обновления
| Номер в каталоге | Производители | Описание | |
| 2N3904 |  Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
| NE555 |  ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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