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4N38M даташит

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Номер в каталоге Производители Описание PDF
4N30 Toshiba Semiconductor
Toshiba Semiconductor
  PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)

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4N30 QT Optoelectronics
QT Optoelectronics
  GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS

GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. 4N29 4N30 4N31 4N32 4N33 FEATURES • High sensitivity to low input drive current • Meets or exceeds all JEDEC Registered Specifications • VDE 0884 approval available as a test option -add option .300. (e.g., 4N29.300) SCHEMATIC ANODE 1 6 BASE APPLICATIONS • • • • • Low power logic circuits Telecommunication
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4N30 Motorola  Inc
Motorola Inc
  STANDARD THRU HOLE CASE 730A-04

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 4N29/D 6-Pin DIP Optoisolators Darlington Output The 4N29/A, 4N30, 4N31, 4N32(1) and 4N33(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This series is designed for use in applications requiring high collector output currents at lower input currents. • Higher Sensitivity to Low Input Drive Current • Meets or Exceeds All JEDEC Registered Specifications • To order devi
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4N30 Fairchild Semiconductor
Fairchild Semiconductor
  (4N30 - 4N3) General Purpose 6-Pin Photodarlington Optocoupler

4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler April 2007 4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler Features ■ High sensitivity to low input drive current ■ Meets or exceeds all JEDEC Registered tm Description The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. Specifications ■ VDE 0884 approval available as a test option – add option .300. (e.g., 4N29.300) App
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4N30Z UNISONIC TECHNOLOGIES
UNISONIC TECHNOLOGIES
  40A 300V N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 4N30Z 4A, 300V N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET The U TC 4N30Z is an N-ch annel mod e p ower MOSF ET using UTC’s advanc ed techn ology to provid e customers with a minimum on-state res istance, lo w gate charge a nd superior s witching performance. „ FEATURES * RDS(ON)<2Ω @ VGS=10V, ID=4A * High switching speed * Typically 3.2nC low gate charge * 100% avalanche tested * Enhanced ESD capability „ SYMBOL „ ORDERING INFORMATION Package TO-252 TO-252 Pin Assig
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4N31 Toshiba Semiconductor
Toshiba Semiconductor
  PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)

pdf
4N31 QT Optoelectronics
QT Optoelectronics
  GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS

GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. 4N29 4N30 4N31 4N32 4N33 FEATURES • High sensitivity to low input drive current • Meets or exceeds all JEDEC Registered Specifications • VDE 0884 approval available as a test option -add option .300. (e.g., 4N29.300) SCHEMATIC ANODE 1 6 BASE APPLICATIONS • • • • • Low power logic circuits Telecommunication
pdf
4N31 Motorola  Inc
Motorola Inc
  STANDARD THRU HOLE CASE 730A-04

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 4N29/D 6-Pin DIP Optoisolators Darlington Output The 4N29/A, 4N30, 4N31, 4N32(1) and 4N33(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This series is designed for use in applications requiring high collector output currents at lower input currents. • Higher Sensitivity to Low Input Drive Current • Meets or Exceeds All JEDEC Registered Specifications • To order devi
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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