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4953B даташитФункция этой детали – «Dual 20v P-channel Powertrench Mosfet». |
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Номер в каталоге | Производители | Описание | |
4953B | Tuofeng Semiconductor |
Dual 20V P-Channel PowerTrench MOSFET Shenzhen Tuofeng Semiconductor Technology 4Co9.,5L3tdB
4953B
Dual 20V P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings .
Applications
• Power management • Load switch • Battery protection
Features
• –3.5 A, –20 V
RDS(ON) = 70 mΩ @ VGS = –4.5V RDS(ON) = 135mΩ @ VGS = –2.5 V
• Lo |
Это результат поиска, начинающийся с "4953B", "49" |
Номер в каталоге | Производители | Описание | |
ACE4953B | ACE Technology |
Dual P-Channel Enhancement Mode Field Effect Transistor ACE4953B
Dual P-Channel Enhancement Mode Field Effect Transistor
Description The ACE4953B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications.
Features
VDS(V)=-20 |
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BR4953B | BLUE ROCKET ELECTRONICS |
Dual P-Channel MOSFET BR4953B
Rev.F Jul.-2016
DATA SHEET
描述 / Descriptions SOP-8 塑封封装双 P 沟道 MOS 场效应管。Dual P-Channel MOSFET in a SOP-8 Plastic Package.
特征 / Features
超高密度设计,导通电阻小,可靠性好。 Super high dense cell design for low RDS(ON) |
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GSS4953BDY | GTM |
Power MOSFET ( Transistor )
Pb Free Plating Product
ISSUED DATE :2006/07/14 REVISED DATE :
GSS4953BDY
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 42m -5A
The GSS4953BDY provide the designer with the best combination of fast switching, ruggedized device design, low |
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MGF4953B | Mitsubishi Electric |
SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package
Nov./2006
MITSUBISHI SEMICONDUTOR |
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SD4953BDY | ETC |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET
SD4953BDY
Description
The SD4953BDY provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-indu |
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SPP4953B | SYNC POWER |
P-Channel Enhancement Mode MOSFET SPP4953B
P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP4953B is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state res |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |