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3NF06L даташит ( Даташиты, Даташиты )

Номер в каталоге Описание Производители PDF
1 3NF06L   STN3NF06L

N-CHANNEL 60V - 0.07Ω - 4A SOT-223 STripFET™ II POWER MOSFET TYPE STN3NF06L s s s s s STN3NF06L VDSS 60 V RDS(on) < 0.1 Ω ID 4A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE 2 1 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche ch
STMicroelectronics
STMicroelectronics
pdf



3N даташита ( переписка )

Номер в каталоге Описание Производители PDF
3N189

Trans MOSFET N-CH 25V 0.03A

New Jersey Semiconductor
New Jersey Semiconductor
pdf
3N247

Diode

American Microsemiconductor
American Microsemiconductor
pdf
3N257-M

SILICON BRIDGE RECTIFIERS

Central Semiconductor
Central Semiconductor
pdf
3N204

Trans MOSFET N-CH 25V

New Jersey Semiconductor
New Jersey Semiconductor
pdf
3N253

Diode

American Microsemiconductor
American Microsemiconductor
pdf
3N129

Trans MOSFET N-CH 20V 0.05A Rail

New Jersey Semiconductor
New Jersey Semiconductor
pdf
3N201

Diode

American Microsemiconductor
American Microsemiconductor
pdf
3N250

Diode

American Microsemiconductor
American Microsemiconductor
pdf
3N259

DUAL GATE MOSFET VHF AMPLIFIER

Digitron Semiconductors
Digitron Semiconductors
pdf
3N170-1

N-CHANNEL MOSFET ENHANCEMENT MODE

Linear Integrated Systems
Linear Integrated Systems
pdf



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Последние обновления

Номер в каталоге Описание Производители PDF
CD4515BC

The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors. These circuits are primarily used in decoding applications where low power dissipation and/or high noise immunity is required.

Fairchild Semiconductor
Fairchild Semiconductor
pdf
HV101WU1-1E6

HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices. This module has a 10.1 inch diagonally measured active area with WUXGA resolutions (1920 horizontal by 1200 vertical pixel array).

HYDIS
HYDIS
pdf

На первой странице data sheets приводятся:
свойства компонента (features), его основные параметры (quick reference data), обозначение на принципиальных схемах (symbol), краткое описание (general description).



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