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2SK596S даташит ( Даташиты, Даташиты )

Номер Номер в каталоге Описание Производители PDF
1 2SK596S   N-Channel JFET

Ordering number : ENA0944 2SK596S N-Channel JFET 20V, 140 to 350μA, 1.0mS, SPA Features • • • • http://onsemi.com Low output noise voltage : VNO=--110dB max (VCC=4.5V, RL=1kΩ, Cin=15pF, VIN=0V, A curve) Especiallysuited for use in condenser microphone for audio equipments and telephones Excellent transient characteristic Adoption of FBET process Specifications Absolute Maximum Ratings at Ta=25°C Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature St
ON Semiconductor
ON Semiconductor
2SK596S pdf Даташит



2SK даташита ( переписка )

Номер в каталоге Описание Производители PDF
2SK3214

Silicon N Channel MOS FET High Speed Power Switching

Hitachi Semiconductor
Hitachi Semiconductor
pdf
2SK3516-01SJ

N-CHANNEL SILICON POWER MOSFET

Fuji Electric
Fuji Electric
pdf
2SK3835

N-Channel Silicon MOSFET

Sanyo
Sanyo
pdf
2SK1254L

Silicon N Channel MOS FET

Renesas
Renesas
pdf
2SK3161S

Silicon N Channel MOS FET High Speed Power Switching

Hitachi Semiconductor
Hitachi Semiconductor
pdf
2SK3716

SWITCHING N-CHANNEL POWER MOSFET

NEC
NEC
pdf
2SK3592-01SJ

N-CHANNEL SILICON POWER MOSFET

Fuji Electric
Fuji Electric
pdf
2SK3147S

Silicon N Channel MOS FET High Speed Power Switching

Hitachi Semiconductor
Hitachi Semiconductor
pdf
2SK1519

Silicon N Channel MOS FET

Renesas
Renesas
pdf
2SK3154

Silicon N Channel MOS FET High Speed Power Switching

Hitachi Semiconductor
Hitachi Semiconductor
pdf


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Последние обновления

Номер в каталоге Описание Производители PDF
CD4515BC

The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors. These circuits are primarily used in decoding applications where low power dissipation and/or high noise immunity is required.

Fairchild Semiconductor
Fairchild Semiconductor
pdf
GUVA-S12SD

This electronic part is an UV-B Sensor.

ROITHNER
ROITHNER
pdf
HV101WU1-1E6

HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices. This module has a 10.1 inch diagonally measured active area with WUXGA resolutions (1920 horizontal by 1200 vertical pixel array).

HYDIS
HYDIS
pdf
KTD1145

This electronic part is an EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC
pdf

На первой странице data sheets приводятся:
свойства компонента (features), его основные параметры (quick reference data), обозначение на принципиальных схемах (symbol), краткое описание (general description).



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