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2SK4126 даташитФункция этой детали – «N-channel SilICon Mosfet». |
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Номер в каталоге | Производители | Описание | |
2SK4126 | Sanyo Semicon Device |
N-Channel Silicon MOSFET www.DataSheet.co.kr
Ordering number : ENA0748A
2SK4126
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
2SK4126
Features
• • •
General-Purpose Switching Device Applications
Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel T |
Это результат поиска, начинающийся с "2SK4126", "2SK4" |
Номер в каталоге | Производители | Описание | |
2SK400 | Inchange Semiconductor |
N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK400
DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage-
: VDSS=200V(Min) ·Fast Switching Speed
APPLICATIONS ·low on–resistance ·High speed switching ·Low drive current |
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2SK4002 | Toshiba Semiconductor |
Chopper Regulator 2SK4002
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V)
2SK4002
Chopper Regulator, DC/DC Converter and Motor Drive Applications
6.5±0.2
Unit: mm
1.5±0.2
z Low drain−source ON-resistance z High forward transfer admittance z L |
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2SK4003 | Toshiba Semiconductor |
Chopper Regulator 2SK4003
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS VI)
2SK4003
Chopper Regulator, DC/DC Converter and Motor Drive Applications
6.5±0.2
Unit: mm
1.5±0.2
z Low drain−source ON-resistance z Low leakage current z Enhancement mo |
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2SK4004-01MR | Fuji |
Power MOSFET ( Transistor ) This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the expres |
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2SK4005-01MR | Fuji Electric |
Power MOSFET ( Transistor ) This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the expres |
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2SK4012 | Toshiba Semiconductor |
Switching Regulator Applications
2SK4012
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK4012
Switching Regulator Applications
z Low drain−source ON-resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.33 Ω (typ. |
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Последние обновления
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2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |