Datasheet 2SK4016 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	2SK4016	Switching Regulator Applications 2SK4016 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS VI) 2SK4016 Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.) High forward transfer admittance: \|Yfs\| = 10 S (typ.) Low leakage current: IDSS =	Toshiba Semiconductor

2SK4 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
2SK405	Silicon N Channel MOS type	Toshiba America Electronic Components
2SK4005-01MR	Power MOSFET ( Transistor ) This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the expres	Fuji Electric
2SK439	Silicon N-Channel MOS FET 2SK439 Silicon N-Channel MOS FET Application VHF amplifier Outline SPAK 1 23 1. Gate 2. Source 3. Drain 2SK439 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature	Hitachi Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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