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2SK4015 даташит

Функция этой детали – «Switching Regulator ApplICations».



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Номер в каталоге Производители Описание PDF
2SK4015 Toshiba Semiconductor
Toshiba Semiconductor
  Switching Regulator Applications

2SK4015 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS VI) 2SK4015 Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.60 Ω (typ.) High forward transfer admittance: |Yfs| = 7.4 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
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Это результат поиска, начинающийся с "2SK4015", "2SK4"

Номер в каталоге Производители Описание PDF
2SK400 Inchange Semiconductor
Inchange Semiconductor

N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK400 DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS=200V(Min) ·Fast Switching Speed APPLICATIONS ·low on–resistance ·High speed switching ·Low drive current
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2SK4002 Toshiba Semiconductor
Toshiba Semiconductor

Chopper Regulator

2SK4002 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V) 2SK4002 Chopper Regulator, DC/DC Converter and Motor Drive Applications 6.5±0.2 Unit: mm 1.5±0.2 z Low drain−source ON-resistance z High forward transfer admittance z L
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2SK4003 Toshiba Semiconductor
Toshiba Semiconductor

Chopper Regulator

2SK4003 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS VI) 2SK4003 Chopper Regulator, DC/DC Converter and Motor Drive Applications 6.5±0.2 Unit: mm 1.5±0.2 z Low drain−source ON-resistance z Low leakage current z Enhancement mo
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2SK4004-01MR Fuji
Fuji

Power MOSFET ( Transistor )

This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the expres
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2SK4005-01MR Fuji Electric
Fuji Electric

Power MOSFET ( Transistor )

This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the expres
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2SK4012 Toshiba Semiconductor
Toshiba Semiconductor

Switching Regulator Applications

2SK4012 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK4012 Switching Regulator Applications z Low drain−source ON-resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.33 Ω (typ.
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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