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2SK33 даташит ( Даташиты, Даташиты )

Номер в каталоге Описание Производители PDF
86 2SK330   Silicon N Channel Junction Type Transistor

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK330 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SK330 Unit: mm • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA (max) (VGS = −30 V) • Low RDS (ON): RDS (ON) = 320 Ω (typ.) (IDSS = 5 mA) • Complementary to 2SJ105 • Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage VGDS −50 V Gate current IG 10 mA
Toshiba Semiconductor
Toshiba Semiconductor
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85 2SK3301   Silicon N Channel MOS Type Field Effect Transistor

2SK3301 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) 2SK3301 Switching Regulatorand DC-DC Converter Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 15 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) • Enhancement mode: Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 k
Toshiba Semiconductor
Toshiba Semiconductor
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84 2SK3302   Silicon N Channel MOS Type Field Effect Transistor

2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3302 Switching Regulator and DC-DC Converter Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) • Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20
Toshiba Semiconductor
Toshiba Semiconductor
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83 2SK3304   SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3304 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3304 is N-Channel MOS FET device that features a Low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply. ORDERING INFORMATION PART NUMBER 2SK3304 PACKAGE TO-3P FEATURES • Low gate charge : QG = 44 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 7.0 A) • Gate voltage rating : ±30 V • Low on-state resistance : RDS(on) = 2.0 Ω MAX
NEC
NEC
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82 2SK3305   SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3305 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3305 2SK3305-S 2SK3305-ZJ PACKAGE TO-220AB TO-262 TO-263 DESCRIPTION The 2SK3305 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge: QG = 13 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 5.0 A) • Gate voltage rating: ±30 V
NEC
NEC
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81 2SK3305-S   SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3305 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3305 2SK3305-S 2SK3305-ZJ PACKAGE TO-220AB TO-262 TO-263 DESCRIPTION The 2SK3305 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge: QG = 13 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 5.0 A) • Gate voltage rating: ±30 V
NEC
NEC
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80 2SK3305-ZJ   SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3305 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3305 2SK3305-S 2SK3305-ZJ PACKAGE TO-220AB TO-262 TO-263 DESCRIPTION The 2SK3305 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge: QG = 13 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 5.0 A) • Gate voltage rating: ±30 V
NEC
NEC
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79 2SK3306   SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3306 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3306 PACKAGE Isolated TO-220 (MP-45F) DESCRIPTION The 2SK3306 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge : 5 QG = 13 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 5.0 A) • Gate voltage rating : ±30 V • Low on-state r
NEC
NEC
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Fairchild Semiconductor
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