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Datasheet 2SK33 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
86 | 2SK330 | Silicon N Channel Junction Type Transistor TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK330
For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications
2SK330
Unit: mm
• High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA (max) (VGS = −30 V) • Low RDS (ON |
Toshiba Semiconductor |
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85 | 2SK3301 | Silicon N Channel MOS Type Field Effect Transistor 2SK3301
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII)
2SK3301
Switching Regulatorand DC-DC Converter Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 15 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.) • Low leakage current: IDS |
Toshiba Semiconductor |
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84 | 2SK3302 | Silicon N Channel MOS Type Field Effect Transistor 2SK3302
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3302
Switching Regulator and DC-DC Converter Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.) • Low leakage current: IDS |
Toshiba Semiconductor |
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83 | 2SK3304 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3304
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3304 is N-Channel MOS FET device that features a Low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply.
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NEC |
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Número de pieza | Descripción | Fabricantes | |
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