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2SK321 даташитФункция этой детали – «Si N-channel Junction». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
2SK321 | Panasonic Semiconductor |
SI N-CHANNEL JUNCTION |
|
2SK3211 | Renesas |
Silicon N Channel MOS FET 2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 60 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
REJ03G1091-0400 Rev.4.00
May 15, 2006
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L))
4
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1))
D
4 G
12 3
123
S
1. Gate 2. Drain 3. Source 4. Drain
Rev.4.00 May 15, 2006 page 1 of 8
2SK3211(L), 2SK3211(S)
Absolute Maximum Ratings
|
|
2SK3211 | Hitachi Semiconductor |
Silicon N Channel MOS FET High Speed Power Switching 2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-761A (Z) 2nd. Edition February 1999 Features
• • • Low on-resistance RDS = 60 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source
2SK3211
Outline
LDPAK
4 4
D
1 1
2
3
G
2
3
1. Gate 2. Drain 3. Source 4. Drain
S
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Av |
|
2SK3211L | Renesas |
Silicon N Channel MOS FET 2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 60 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
REJ03G1091-0400 Rev.4.00
May 15, 2006
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L))
4
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1))
D
4 G
12 3
123
S
1. Gate 2. Drain 3. Source 4. Drain
Rev.4.00 May 15, 2006 page 1 of 8
2SK3211(L), 2SK3211(S)
Absolute Maximum Ratings
|
|
2SK3211L | Hitachi Semiconductor |
Silicon N Channel MOS FET High Speed Power Switching 2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-761A (Z) 2nd. Edition February 1999 Features
• • • Low on-resistance RDS = 60 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source
2SK3211
Outline
LDPAK
4 4
D
1 1
2
3
G
2
3
1. Gate 2. Drain 3. Source 4. Drain
S
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Av |
|
2SK3211S | Renesas |
Silicon N Channel MOS FET 2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 60 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
REJ03G1091-0400 Rev.4.00
May 15, 2006
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L))
4
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1))
D
4 G
12 3
123
S
1. Gate 2. Drain 3. Source 4. Drain
Rev.4.00 May 15, 2006 page 1 of 8
2SK3211(L), 2SK3211(S)
Absolute Maximum Ratings
|
|
2SK3211S | Hitachi Semiconductor |
Silicon N Channel MOS FET High Speed Power Switching 2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-761A (Z) 2nd. Edition February 1999 Features
• • • Low on-resistance RDS = 60 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source
2SK3211
Outline
LDPAK
4 4
D
1 1
2
3
G
2
3
1. Gate 2. Drain 3. Source 4. Drain
S
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Av |
|
2SK3212 | Renesas |
Silicon N Channel MOS FET 2SK3212
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS =0.1 Ω typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1092-0300 (Previous: ADE-208-752A)
Rev.3.00 Sep 07, 2005
RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM)
D
G 1. Gate 2. Drain 3. Source
12 3
S
Rev.3.00 Sep 07, 2005 page 1 of 7
2SK3212
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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