|
|
Datasheet 2SK3151 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | 2SK3151 | Silicon N Channel MOS FET 2SK3151
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS (on) = 11.5 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
REJ03G1076-0400 (Previous: ADE-208-747B)
Rev.4.00 Sep 07, 2005
Outline
RENESAS Package code: PRSS0 |
Renesas |
|
1 | 2SK3151 | Silicon N Channel MOS FET High Speed Power Switching 2SK3151
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-747A (Z) 2nd. Edition February 1999 Features
• Low on-resistance R DS (on) = 11.5 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
TO–3P
D 2
1 G
1
3 S
2
3
1. Gate 2. Dr |
Hitachi Semiconductor |
Esta página es del resultado de búsqueda del 2SK3151. Si pulsa el resultado de búsqueda de 2SK3151 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |