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Datasheet 2SK3141 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SK3141 | Silicon N Channel MOS FET High Speed Power Switching 2SK3141
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-680B (Z) 3rd. Edition February 1999 Features
• Low on-resistance R DS(on) = 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source
Outline
TO–220AB
D
G
1 2 S 3
1. Gate 2. Drain(Flange) 3 |
 Hitachi Semiconductor |
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| 1 | 2SK3141 | Silicon N-Channel MOS FET 2SK3141
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 4 mΩ typ.
• Low drive current • 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB)
123
G
REJ03G1070-0400 (Previous: ADE |
 Renesas |
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