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2SK3018 даташитФункция этой детали – «2.5v Drive Nch Mos Fet». |
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Номер в каталоге | Производители | Описание | |
2SK3018 | ROHM Semiconductor |
2.5V Drive Nch MOS FET Transistor
2.5V Drive Nch MOS FET
2SK3018
2SK3018
zStructure Silicon N-channel MOSFET
zApplications Interfacing, switching (30V, 100mA)
zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for
portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy.
zExternal dimensions (Unit : mm)
UMT3
2.0 0.3
(3)
0.9 0.2 0.7
1.25 2.1 0.1Min.
(1) Source (2) Gate (3) Drain
(2) (1)
0.65 0.65 1.3
0.15
Each lead has same dimensions
Abbreviated symbol : |
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2SK3018 | MCC |
N-Channel Enhancement Mode Field Effect Transistor MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
2SK3018
Features
• Low ON-Resistance • Low Input Capacitance • Low Voltage drive makes this device idipmenteal for portable equipment • Fast Switching Speed • Easily Designed Drive Circuits • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1
Mechanical Data
• Halogen free available upon request by adding suffix "-HF" • Case: SOT |
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2SK3018 | Kexin |
N-Channel MOSFET SMD Type
N-Channel MOSFET
MOSFET
2SK3018
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
+0.1 2.4-0.1
1
2
+0.1 0.95-0.1 +0.1 1.9-0.1
¡ñ Fast switching speed. ¡ñ Silicon N-channel MOSFET ¡ñ Drive circuits can be simple.
Gate
0.55
¡ñ Low on-resistance.
Drain
+0.1 1.3-0.1
¡ö Features
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 1. Gate
∗ Gate
+0.1 0.38-0.1
0-0.1
2.Emitter 2. Source
Protection Diode
3. Drain 3.collector
Source
¡ö Absolute
Maximum Ratings Ta = 25¡æ
Parameter Symbol VDSS VGSS |
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2SK3018 | JinYu |
N-Channel Enhancement Mode MOSFET 2SK3018
N-Channel Enhancement Mode MOSFET
• Features
1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel.
• External dimensions
• Applications
Interfacing, switching (30V, 100mA)
Units:mm
• Structure
Silicon N-channel MOSFET
SOT-23 SOT-323
. Gate
. Source
. Drain
• Absolute maximum ratings (Ta = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Reverse curr |
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2SK3018 | JCET |
N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate MOSFETS
2SK3018 N-channel MOSFET
V(BR)DSS
30 V
RDS(on)MAX
8Ω@4V
13Ω@2.5V
ID
100mA
SOT-323
1. GATE 2. SOURCE 3. DRAIN
FEATURE z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for
Portable equipment z Easily designed drive circuits z Easy to parallel
MARKING
APPLICATION z Interfacing , Switching
Equivalent Circuit
MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted)
Symbol VDS VG |
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2SK3018 | Galaxy Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor Production specification
N-Channel Enhancement Mode Field Effect Transistor 2SK3018
FEATURES
z Low on-resistance. z Fast switching speed. z Low voltage drive(2.5V)makes this
Device ideal for portable equipment. z Easily designed drive circuits. z Easy to parallel.
Pb
Lead-free
APPLICATIONS
z Interfacing,switching (30V,100mA)
ORDERING INFORMATION
Type No.
Marking
2SK3018
KN
SOT-23
Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
Drain-Source voltage
30
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2SK3018 | BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET 2SK3018
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions SOT-23 塑封封装 N 道 MOS 场效应管。N- CHANNEL MOSFET in a SOT-23 Plastic Package.
特征 / Features
低导通电阻,开关速度快,低电压驱动,简化驱动电路和简便平面。 Low on-resistance, fast switching speed, low voltage drive, easily designed drive circuits, easy to parallel.
用途 / Applications 触摸屏,交换开关。 Interfacing, switching.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
3
2 1
PIN1:S
PI |
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2SK3018W | WEITRON |
N-Channel POWER MOSFET N-Channel POWER MOSFET
P b Lead(Pb)-Free
3 DRAIN
1
Description:
* Low on-resistance. * Fast switching speed.
GATE
*Gate
Protection
Diode
2 SOURCE
* Low voltage drive (2.5V) makes this device ideal for
portable equipment.
* Easily designed drive circuits.
* Easy to parallel.
Features:
* Simple Drive Requirement * Small Package Outline
2SK3018W
3 1
2
SOT-323(SC-70)
Maximum Ratings (TA=25°C Unless Otherwise Specified)
Rating
Symbol
Value
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current |
[1]  [2]
Последние обновления
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2N3904 | Unisonic Technologies |
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