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Datasheet 2SK2570 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | 2SK2570 | Silicon N-Channel MOS FET Low Frequency Power Switching 2SK2570
Silicon N-Channel MOS FET Low Frequency Power Switching
ADE-208-574 1st. Edition Features
• Low on-resistance R DS(on) = 0. 8 Ω typ. (VGS = 4 V, I D = 100 mA) • 2.5V gate drive devices. • Small package (MPAK)
Outline
MPAK
3 1 2
D
G
1. Source 2. Gate 3. Drain
S
2SK2570
Absolute |
Hitachi Semiconductor |
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1 | 2SK2570 | Silicon N Channel MOS FET 2SK2570
Silicon N Channel MOS FET Low Frequency Power Switching
REJ03G1019-0200 (Previous: ADE-208-574) Rev.2.00 Sep 07, 2005
Features
• Low on-resistance RDS(on) = 0.8 Ω typ. (VGS = 4 V, ID = 100 mA) • 2.5 V gate drive devices. • Small package (MPAK)
Outline
RENESAS Package code: PLSP0003 |
Renesas |
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