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Datasheet 2SK215 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 2SK215 | Silicon N-Channel MOS FET 2SK213, 2SK214, 2SK215, 2SK216
Silicon N-Channel MOS FET
Application
High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79
Features
• • • • Suitable for direct mounting High forward transfer admittance Excellent frequency respo | Hitachi Semiconductor | mosfet |
2 | 2SK215 | Silicon N Channel MOS FET 2SK213, 2SK214, 2SK215, 2SK216
Silicon N Channel MOS FET
REJ03G0903-0200 (Previous: ADE-208-1241) Rev.2.00 Sep 07, 2005
Application
High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79
Features
• • • • Suit | Renesas Technology | mosfet |
3 | 2SK2150 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK2150
DESCRIPTION ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Fast Switching Speed
APPLICATIONS ·Switching regulators ·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta | Inchange Semiconductor | mosfet |
4 | 2SK2150 | SILICON N CHANNEL MOS TYPE | Toshiba Semiconductor | mosfet |
5 | 2SK2151 | N-Channel Silicon MOSFET Ordering number:ENN4568A
Features
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.
N-Channel Silicon MOSFET
2SK2151
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2062A
[2SK2151] 4.5 1.6
1.5
1.0 2.5 4.25max
0.4 0.5
32 1.5 3.0
1
0.75
Specifications | Sanyo Semicon Device | mosfet |
2SK Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2SK0065 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK0065 (2SK65)
Silicon N-Channel Junction FET
For impedance conversion in low frequency For electret capacitor microphone
4.0±0.2 2.0±0.2 (0.8) 3.0±0.2
unit: mm
I Features
G Diode is connected between gate and source G Low noise voltage
I Absolute Maximu Panasonic Semiconductor mosfet | | |
2 | 2SK0123 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK0123 (2SK123)
Silicon N-Channel Junction FET
For impedance conversion in low frequency For electret capacitor microphone s Features
q High mutual conductance gm q Low noise voltage of NV
1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10˚
Unit: mm
0.40+0.10 � Panasonic Semiconductor mosfet | | |
3 | 2SK0198 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK0198 (2SK198)
Silicon N-Channel Junction FET
For low-frequency amplification
0.40+0.10 –0.05
Unit: mm
0.16+0.10 –0.06
s Features
q High mutual conductance gm q Low noise type q Mini-type package, allowing downsizing of the sets and automatic insertion t Panasonic Semiconductor mosfet | | |
4 | 2SK0301 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK0301 (2SK301)
Silicon N-Channel Junction FET
For low-frequency amplification For switching
5.0±0.2 5.1±0.2 4.0±0.2
unit: mm
I Features
13.5±0.5
G Low noies, high gain G High gate to drain voltage VGDO
0.45 –0.1
+0.2
0.45 –0.1
+0.2
I Absolute Panasonic Semiconductor mosfet | | |
5 | 2SK0601 | Silicon N-Channel MOS FET Silicon MOS FETs (Small Signal)
2SK601
Silicon N-Channel MOS FET
For switching
unit: mm
s Features
q Low ON-resistance RDS(on) q High-speed switching q Allowing to be driven directly by CMOS and TTL q Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape Panasonic Semiconductor mosfet | | |
6 | 2SK0614 | Silicon N-Channel MOS FET Silicon MOS FETs (Small Signal)
2SK0614 (2SK614)
Silicon N-Channel MOS FET
For switching
unit: mm
I Features
5.0±0.2
4.0±0.2
0.7±0.1
0.7±0.2 12.9±0.5
G Low ON-resistance RDS(on) G High-speed switching G Allowing to be driven directly by CMOS and TTL
I Absolute Maximum Ratings (Ta = 25° Panasonic Semiconductor mosfet | | |
7 | 2SK0615 | SILICON N-CHANNEL MOS FET Silicon MOS FETs (Small Signal)
2SK0615 (2SK615)
Silicon N-Channel MOS FET
For switching
Unit: mm
I Features
2.0±0.2
G Low ON-resistance G High-speed switching G Allowing to be driven directly by CMOS and TTL G M type package, allowing easy automatic and manual insertion as well as stand-alone Panasonic Semiconductor mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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