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Datasheet 2SK215 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
12SK215Silicon N-Channel MOS FET

2SK213, 2SK214, 2SK215, 2SK216 Silicon N-Channel MOS FET Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features • • • • Suitable for direct mounting High forward transfer admittance Excellent frequency respo
Hitachi Semiconductor
Hitachi Semiconductor
mosfet
22SK215Silicon N Channel MOS FET

2SK213, 2SK214, 2SK215, 2SK216 Silicon N Channel MOS FET REJ03G0903-0200 (Previous: ADE-208-1241) Rev.2.00 Sep 07, 2005 Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features • • • • Suit
Renesas Technology
Renesas Technology
mosfet
32SK2150N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK2150 DESCRIPTION ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed APPLICATIONS ·Switching regulators ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta
Inchange Semiconductor
Inchange Semiconductor
mosfet
42SK2150SILICON N CHANNEL MOS TYPE

Toshiba Semiconductor
Toshiba Semiconductor
mosfet
52SK2151N-Channel Silicon MOSFET

Ordering number:ENN4568A Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. N-Channel Silicon MOSFET 2SK2151 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2062A [2SK2151] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 3.0 1 0.75 Specifications
Sanyo Semicon Device
Sanyo Semicon Device
mosfet


2SK Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
12SK0065Silicon N-Channel Junction FET

Silicon Junction FETs (Small Signal) 2SK0065 (2SK65) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 unit: mm I Features G Diode is connected between gate and source G Low noise voltage I Absolute Maximu
Panasonic Semiconductor
Panasonic Semiconductor
mosfet
22SK0123Silicon N-Channel Junction FET

Silicon Junction FETs (Small Signal) 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone s Features q High mutual conductance gm q Low noise voltage of NV 1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10˚ Unit: mm 0.40+0.10 �
Panasonic Semiconductor
Panasonic Semiconductor
mosfet
32SK0198Silicon N-Channel Junction FET

Silicon Junction FETs (Small Signal) 2SK0198 (2SK198) Silicon N-Channel Junction FET For low-frequency amplification 0.40+0.10 –0.05 Unit: mm 0.16+0.10 –0.06 s Features q High mutual conductance gm q Low noise type q Mini-type package, allowing downsizing of the sets and automatic insertion t
Panasonic Semiconductor
Panasonic Semiconductor
mosfet
42SK0301Silicon N-Channel Junction FET

Silicon Junction FETs (Small Signal) 2SK0301 (2SK301) Silicon N-Channel Junction FET For low-frequency amplification For switching 5.0±0.2 5.1±0.2 4.0±0.2 unit: mm I Features 13.5±0.5 G Low noies, high gain G High gate to drain voltage VGDO 0.45 –0.1 +0.2 0.45 –0.1 +0.2 I Absolute
Panasonic Semiconductor
Panasonic Semiconductor
mosfet
52SK0601Silicon N-Channel MOS FET

Silicon MOS FETs (Small Signal) 2SK601 Silicon N-Channel MOS FET For switching unit: mm s Features q Low ON-resistance RDS(on) q High-speed switching q Allowing to be driven directly by CMOS and TTL q Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape
Panasonic Semiconductor
Panasonic Semiconductor
mosfet
62SK0614Silicon N-Channel MOS FET

Silicon MOS FETs (Small Signal) 2SK0614 (2SK614) Silicon N-Channel MOS FET For switching unit: mm I Features 5.0±0.2 4.0±0.2 0.7±0.1 0.7±0.2 12.9±0.5 G Low ON-resistance RDS(on) G High-speed switching G Allowing to be driven directly by CMOS and TTL I Absolute Maximum Ratings (Ta = 25°
Panasonic Semiconductor
Panasonic Semiconductor
mosfet
72SK0615SILICON N-CHANNEL MOS FET

Silicon MOS FETs (Small Signal) 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching Unit: mm I Features 2.0±0.2 G Low ON-resistance G High-speed switching G Allowing to be driven directly by CMOS and TTL G M type package, allowing easy automatic and manual insertion as well as stand-alone
Panasonic Semiconductor
Panasonic Semiconductor
mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

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