|
|
Datasheet 2SJ506 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | 2SJ506 | Silicon P Channel MOS FET High Speed Power Switching 2SJ506(L), 2SJ506(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-548 Target Specification 1st. Edition Features
• Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = –10V, ID = –5A) • Low drive current • High speed switching • 4V gate drive devices.
Outline
DPAK–2 |
Hitachi Semiconductor |
|
2 | 2SJ506L | Silicon P Channel MOS FET High Speed Power Switching 2SJ506(L), 2SJ506(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-548 Target Specification 1st. Edition Features
• Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = –10V, ID = –5A) • Low drive current • High speed switching • 4V gate drive devices.
Outline
DPAK–2 |
Hitachi Semiconductor |
|
1 | 2SJ506S | Silicon P Channel MOS FET High Speed Power Switching 2SJ506(L), 2SJ506(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-548 Target Specification 1st. Edition Features
• Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = –10V, ID = –5A) • Low drive current • High speed switching • 4V gate drive devices.
Outline
DPAK–2 |
Hitachi Semiconductor |
Esta página es del resultado de búsqueda del 2SJ506. Si pulsa el resultado de búsqueda de 2SJ506 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |