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2SD788 даташитФункция этой детали – «SilICon NPN Epitaxial». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
2SD788 | Hitachi Semiconductor |
Silicon NPN Epitaxial 2SD787, 2SD788
Silicon NPN Epitaxial
Application
• Low frequency power amplifier • Complementary pair with 2SB738 and 2SB739
Outline
TO-92MOD
1. Emitter 2. Collector 3. Base 3 2 1
2SD787, 2SD788
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SD787 20 16 6 2 0.9 150 –55 to +150 2SD788 20 20 6 2 0.9 150 –50 to +150 |
Это результат поиска, начинающийся с "2SD788", "2SD" |
Номер в каталоге | Производители | Описание | |
2SC2788 | SavantIC |
SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2788
DESCRIPTION ·With TO-3PN package ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING
P |
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2SD0592A | Panasonic Semiconductor |
Silicon NPN epitaxial planar type Datasheet.esaSheet4U.net
Transistors
2SD0592A (2SD592A)
Silicon NPN epitaxial planar type
For low-frequency output amplification Complementary to 2SB0621A (2SB621A) ■ Features
0.7±0.2
Unit: mm
5.0±0.2 4.0±0.2
• Large collector power dissipation PC • Low collector-emitter |
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2SD0601 | Panasonic Semiconductor |
Silicon NPN epitaxial planer type Transistor
2SD601A
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB709A
2.8 –0.3
+0.2
Unit: mm
s Features
q q q
0.65±0.15
+0.25 1.5 –0.05
0.65±0.15
High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE |
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2SD0601A | Panasonic Semiconductor |
Silicon NPN epitaxial planer type Transistor Transistor
2SD0601A (2SD601A)
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB0709A (2SB709A)
I Features
G High foward current transfer ratio hFE. G Low collector to emitter saturation voltage VCE(sat). G Mini type package, allowing downsizing of |
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2SD0602 | Panasonic Semiconductor |
Silicon NPN epitaxial planer type Transistors
2SD0602A
Silicon NPN epitaxial planer type
Unit: mm
For general amplification Complementary to 2SB0710A I Features
• Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through th |
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2SD0602A | Panasonic Semiconductor |
Silicon NPN epitaxial planer type Transistors
2SD0602A
Silicon NPN epitaxial planer type
Unit: mm
For general amplification Complementary to 2SB0710A I Features
• Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through th |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |