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Datasheet 2SD602A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SD602A | Silicon NPN transistor 2SD602(A)
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.
特征 / Features
与 2SB710(A)互补。 Complementary pair with 2SB710(A)。
用途 / Applications 用于普通功率放大。 General |  BLUE ROCKET ELECTRONICS | transistor |
| 2 | 2SD602A | NPN Plastic Encapsulated Transistor Elektronische Bauelemente
2SD602 / 2SD602A
NPN Plastic-Encapsulate Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURE
Low collector to emitter saturation voltage VCE(sat)
CLASSIFICATION OF hFE (1)
Product-Rank 2SD602-Q 2SD602-R
Range
85~170
120~240
|  SeCoS | transistor |
| 3 | 2SD602A | NPN Transistor 2SD602A
TRANSISTOR (NPN)
SOT–23
FEATURES Low Collector to Emitter Saturation Voltage Mini Type Package
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
60
VCEO Collector-Emitter Voltage
50
VEBO Emitter-Base Voltage
5
IC Coll |  JinYu | transistor |
| 4 | 2SD602A | Silicon Epitaxial Planar Transistor Silicon Epitaxial Planar Transistor
FEATURES
z Complementary to 2SB710A PNP Transistor
z Low collector to emitter saturation voltage VCE(sat)
Pb
Lead-free
Production specification
2SD602A
APPLICATIONS
z General purpose amplifier applications
SOT-23
ORDERING INFORMATION
Type No.
Marking
2SD6 |  Galaxy Microelectronics | transistor |
| 5 | 2SD602A | Silicon NPN epitaxial planer type Transistor
2SD602, 2SD602A
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB710 and 2SB710A
Unit: mm
s Features
q q
2.8 –0.3 0.65±0.15
+0.2
2.9 –0.05
1.9±0.2
+0.2
Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing |  Panasonic Semiconductor | transistor |
2SD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SD0592A | Silicon NPN epitaxial planar type www.DataSheet4U.net
Transistors
2SD0592A (2SD592A)
Silicon NPN epitaxial planar type
For low-frequency output amplification Complementary to 2SB0621A (2SB621A) ■ Features
0.7±0.2
Unit: mm
5.0±0.2 4.0±0.2
• Large collector power dissipation PC • Low collector-emitter saturation voltage V Panasonic Semiconductor transistor | | |
| 2 | 2SD0601 | Silicon NPN epitaxial planer type Transistor
2SD601A
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB709A
2.8 –0.3
+0.2
Unit: mm
s Features
q q q
0.65±0.15
+0.25 1.5 –0.05
0.65±0.15
High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type pac Panasonic Semiconductor transistor | | |
| 3 | 2SD0601A | Silicon NPN epitaxial planer type Transistor Transistor
2SD0601A (2SD601A)
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB0709A (2SB709A)
I Features
G High foward current transfer ratio hFE. G Low collector to emitter saturation voltage VCE(sat). G Mini type package, allowing downsizing of the equipment and
a Panasonic Semiconductor transistor | | |
| 4 | 2SD0602 | Silicon NPN epitaxial planer type Transistors
2SD0602A
Silicon NPN epitaxial planer type
Unit: mm
For general amplification Complementary to 2SB0710A I Features
• Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t Panasonic Semiconductor transistor | | |
| 5 | 2SD0602A | Silicon NPN epitaxial planer type Transistors
2SD0602A
Silicon NPN epitaxial planer type
Unit: mm
For general amplification Complementary to 2SB0710A I Features
• Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t Panasonic Semiconductor transistor | | |
| 6 | 2SD0638 | Silicon NPN epitaxial planar type www.DataSheet4U.net
Transistors
2SD0638 (2SD638)
Silicon NPN epitaxial planar type
For medium-power general amplification Complementary to 2SB0643 (2SB643)
(0.4)
(1.5) (1.5)
Unit: mm
6.9±0.1 2.5±0.1 (1.0)
2.0±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitt Panasonic Semiconductor transistor | | |
| 7 | 2SD0662 | Silicon NPN epitaxial planar type www.DataSheet4U.net
Transistors
2SD0662, 2SD0662B (2SD662, 2SD662B)
Silicon NPN epitaxial planar type
For high breakdown voltage general amplification
6.9±0.1 2.5±0.1 (1.0)
Unit: mm
(0.4)
(1.5)
2.0±0.2
• High collector-emitter voltage (Base open) VCEO • High transition frequency fT • Panasonic Semiconductor transistor | |
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