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Datasheet 2SD2422 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | 2SD2422 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2422
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max.) @IC= 3A ·High DC Current Gain
: hFE= 1000(Min) @ IC= 2A, VCE |
Inchange Semiconductor |
2SD2 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
2SD2499 | SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR |
Toshiba Semiconductor |
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2SD2041 | TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE |
ROHM Semiconductor |
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2SD234 | Silicon NPN Power Transistors |
SavantIC |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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