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Datasheet 2SD2118 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 9 | 2SD2118 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD2118
DESCRIPTION ·High current capacity ·Small and slim package making it easy to make 2SD2118-used set smaller ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations |
 Inchange Semiconductor |
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| 8 | 2SD2118 | NPN Transistor RoHS 2SD2118
2SD2118 TRANSISTOR (NPN)
DFEATURES Power dissipation
TPCM:
1 W (Tamb=25℃)
9. 70¡ 0À. 20 0. 75¡ 0À. 10
1. 60¡ 0À. 15
0. 6 2. 70¡ 0À. 20
5. 50¡ 0À. 10
.,LCollector current
ICM: 5 Collector-base voltage
A
OV(BR)CBO:
50 V
Operating and storage junction temperature |
 WEJ |
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| 7 | 2SD2118 | Transistor SMD Type
Transistors
Low VCE(sat) Transistor 2SD2118
Features
Low VCE(sat). Excellent DC current gain characteristics. NPN silicon transistor.
+9.70 0.2 -0.2
TO-252
6.50+0.15 -0.15
5.30+0.2 -0.2
2.30+0.1 -0.1
0.50+0.8 -0.7
Unit: mm
+1.50 0.15 -0.15
+ 0 .1 55 .5 5 -0.15
0.80+0.1 -0.1
0.12 |
 Kexin |
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| 6 | 2SD2118 | NPN Transistor Transys
Electronics
LIMITED
TO-252-2Plastic-Encapsulated Transistors
2SD2118 TRANSISTOR (NPN)
FEATURES Power dissipation
PCM:
1 W (Tamb=25℃)
Collector current
ICM: 5 Collector-base voltage
A
V(BR)CBO:
50 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
TO- |
 Transys |
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