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Datasheet 2SD1525 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SD1525 | NPN TRIPLE DIFFUSED TYPE (HIGH CURRENT SWITCHING APPLICATIONS) 2SD1525
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)
2SD1525
High Current Switching Applications
Unit: mm
· High collector current: IC = 30 A · High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A) · Monolithic construction with built-in base-emitte |
 Toshiba Semiconductor |
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| 1 | 2SD1525 | Silicon NPN Darlington Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD1525
DESCRIPTION ·High DC Current Gain : hFE= 1000(Min.)@ IC= 20A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = 100V(Min.)
APPLICATIONS ·Designed for high current switching applications.
ABSOL |
 Inchange Semiconductor |
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