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2SD1163 даташитФункция этой детали – «NPN SilICon Epitaxial Power Transistor». |
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Номер в каталоге | Производители | Описание | |
2SD1163 | Thinki Semiconductor |
NPN Silicon Epitaxial Power Transistor 2SD1163/2SD1163A
®
Pb Free Plating Product
2SD1163/2SD1163A
Pb
NPN Silicon Epitaxial Power Transistor
FEATURES:
* Medium Power Linear Switching Applications * Low collector saturation voltage TV horizontal deflection output
15.70±0.20 2.80±0.20
9.90±0.20
φ3
0± .6
0.
20
4.50±0.20 1.30±0.20
13.08±0.20
COLLECTOR 2 BASE 1
9.19±0.20
6.50±0.20
3 EMITTER
1. BASE 2. COLLECTOR 3. EMITTER
3 12
0.80±0.20 2.54typ 2.54typ 0.50±0.20
Dimensions in Millimeters
TO-220C
Package Dimension
Absolute maximum |
|
2SD1163 | SavantIC |
SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1163,2SD1163A
·Wit
DESCRIPTION h TO-220 package ·Low collector saturation voltage APPLICATIONS ·TV horizontal deflection output,
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL PARAMETER 2SD1163 VCBO Collector-base voltage 2SD1163A 2SD1163 VCEO Collector-emitter voltage 2SD1163A VEBO IC ICM IC(surge) PC Tj Tstg Emitter-base voltage Collector c |
|
2SD1163 | Renesas |
Silicon NPN Triple Diffused To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are me |
|
2SD1163 | Hitachi Semiconductor |
Silicon NPN Triple Diffused 2SD1163, 2SD1163A
Silicon NPN Triple Diffused
Application
TV horizontal deflection output
Outline
TO-220AB
1
2 3
1. Base 2. Collector (Flange) 3. Emitter
2SD1163, 2SD1163A
Absolute Maximum Ratings (Ta = 25°C)
Rating Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector surge current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C (peak) I C (surge) PC * T |
|
2SD1163A | Thinki Semiconductor |
NPN Silicon Epitaxial Power Transistor 2SD1163/2SD1163A
®
Pb Free Plating Product
2SD1163/2SD1163A
Pb
NPN Silicon Epitaxial Power Transistor
FEATURES:
* Medium Power Linear Switching Applications * Low collector saturation voltage TV horizontal deflection output
15.70±0.20 2.80±0.20
9.90±0.20
φ3
0± .6
0.
20
4.50±0.20 1.30±0.20
13.08±0.20
COLLECTOR 2 BASE 1
9.19±0.20
6.50±0.20
3 EMITTER
1. BASE 2. COLLECTOR 3. EMITTER
3 12
0.80±0.20 2.54typ 2.54typ 0.50±0.20
Dimensions in Millimeters
TO-220C
Package Dimension
Absolute maximum |
|
2SD1163A | SavantIC |
SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1163,2SD1163A
·Wit
DESCRIPTION h TO-220 package ·Low collector saturation voltage APPLICATIONS ·TV horizontal deflection output,
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL PARAMETER 2SD1163 VCBO Collector-base voltage 2SD1163A 2SD1163 VCEO Collector-emitter voltage 2SD1163A VEBO IC ICM IC(surge) PC Tj Tstg Emitter-base voltage Collector c |
|
2SD1163A | Renesas |
Silicon NPN Triple Diffused To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are me |
|
2SD1163A | Hitachi Semiconductor |
Silicon NPN Triple Diffused 2SD1163, 2SD1163A
Silicon NPN Triple Diffused
Application
TV horizontal deflection output
Outline
TO-220AB
1
2 3
1. Base 2. Collector (Flange) 3. Emitter
2SD1163, 2SD1163A
Absolute Maximum Ratings (Ta = 25°C)
Rating Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector surge current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C (peak) I C (surge) PC * T |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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