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2SD1163 даташит

Функция этой детали – «NPN SilICon Epitaxial Power Transistor».



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Номер в каталоге Производители Описание PDF
2SD1163 Thinki Semiconductor
Thinki Semiconductor
  NPN Silicon Epitaxial Power Transistor

2SD1163/2SD1163A ® Pb Free Plating Product 2SD1163/2SD1163A Pb NPN Silicon Epitaxial Power Transistor FEATURES: * Medium Power Linear Switching Applications * Low collector saturation voltage TV horizontal deflection output 15.70±0.20 2.80±0.20 9.90±0.20 φ3 0± .6 0. 20 4.50±0.20 1.30±0.20 13.08±0.20 COLLECTOR 2 BASE 1 9.19±0.20 6.50±0.20 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER 3 12 0.80±0.20 2.54typ 2.54typ 0.50±0.20 Dimensions in Millimeters TO-220C Package Dimension Absolute maximum
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2SD1163 SavantIC
SavantIC
  SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1163,2SD1163A ·Wit DESCRIPTION h TO-220 package ·Low collector saturation voltage APPLICATIONS ·TV horizontal deflection output, PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER 2SD1163 VCBO Collector-base voltage 2SD1163A 2SD1163 VCEO Collector-emitter voltage 2SD1163A VEBO IC ICM IC(surge) PC Tj Tstg Emitter-base voltage Collector c
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2SD1163 Renesas
Renesas
  Silicon NPN Triple Diffused

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are me
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2SD1163 Hitachi Semiconductor
Hitachi Semiconductor
  Silicon NPN Triple Diffused

2SD1163, 2SD1163A Silicon NPN Triple Diffused Application TV horizontal deflection output Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 2SD1163, 2SD1163A Absolute Maximum Ratings (Ta = 25°C) Rating Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector surge current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C (peak) I C (surge) PC * T
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2SD1163A Thinki Semiconductor
Thinki Semiconductor
  NPN Silicon Epitaxial Power Transistor

2SD1163/2SD1163A ® Pb Free Plating Product 2SD1163/2SD1163A Pb NPN Silicon Epitaxial Power Transistor FEATURES: * Medium Power Linear Switching Applications * Low collector saturation voltage TV horizontal deflection output 15.70±0.20 2.80±0.20 9.90±0.20 φ3 0± .6 0. 20 4.50±0.20 1.30±0.20 13.08±0.20 COLLECTOR 2 BASE 1 9.19±0.20 6.50±0.20 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER 3 12 0.80±0.20 2.54typ 2.54typ 0.50±0.20 Dimensions in Millimeters TO-220C Package Dimension Absolute maximum
pdf
2SD1163A SavantIC
SavantIC
  SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1163,2SD1163A ·Wit DESCRIPTION h TO-220 package ·Low collector saturation voltage APPLICATIONS ·TV horizontal deflection output, PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER 2SD1163 VCBO Collector-base voltage 2SD1163A 2SD1163 VCEO Collector-emitter voltage 2SD1163A VEBO IC ICM IC(surge) PC Tj Tstg Emitter-base voltage Collector c
pdf
2SD1163A Renesas
Renesas
  Silicon NPN Triple Diffused

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are me
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2SD1163A Hitachi Semiconductor
Hitachi Semiconductor
  Silicon NPN Triple Diffused

2SD1163, 2SD1163A Silicon NPN Triple Diffused Application TV horizontal deflection output Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 2SD1163, 2SD1163A Absolute Maximum Ratings (Ta = 25°C) Rating Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector surge current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C (peak) I C (surge) PC * T
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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