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Datasheet 2SD1157 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SD1157 | TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHOING Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
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 Fuji Electric |
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| 1 | 2SD1157 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1157
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V(Min) ·High DC Current Gain: hFE= 250V(Min.) @IC= 0.5A ·Low Collector Saturation Voltage ·High Reliability
APPLICATIONS ·Switching regula |
 Inchange Semiconductor |
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