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2SD1138 даташитФункция этой детали – «SilICon NPN Triple Diffused». |
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Номер в каталоге | Производители | Описание | |
2SD1138 | SavantIC |
SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1138
DESCRIPTION
·With TO-220C
package ·Complement to type 2SB861 APPLICATIONS ·Low frequency high voltage power amplifier TV vertical deflection output
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta |
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2SD1138 | Renesas |
Silicon NPN Triple Diffused To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are me |
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2SD1138 | Hitachi Semiconductor |
Silicon NPN Triple Diffused 2SD1138
Silicon NPN Triple Diffused
Application
Low frequency high voltage power amplifier TV vertical deflection output complementary pair with 2SB861
Outline
TO-220AB
1
2 3
1. Base 2. Collector (Flange) 3. Emitter
2SD1138
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C (peak) PC PC * Junction temperature Storage temperature Note: 1. Value at T |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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