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2SD1060 даташит

Функция этой детали – «NPN Epitaxial Planar SilICon Transistor».



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Номер в каталоге Производители Описание PDF
2SD1060 Unisonic Technologies
Unisonic Technologies
  NPN EPITAXIAL PLANAR SILICON TRANSISTOR

UTC 2SD1060 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR SILICON TRANSISTOR FEATURE *Low collector-to-emitter saturation voltage: VCE(sat)=0.4V max/IC=3A, IB=0.3A 1 APPLICATIONS *Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching. SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
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2SD1060 SavantIC
SavantIC
  SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1060 DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Complement to type 2SB824 APPLICATIONS ·Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Col
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2SD1060 Sanyo Semicon Device
Sanyo Semicon Device
  50V/5A Switching Applications

Ordering number:686I PNP/NPN Epitaxial Planar Silicon Transistors 2SB824/2SD1060 50V/5A Switching Applications Applications · Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching. Package Dimensions unit:mm 2010C [2SB824/2SD1060] Features · Low collector-to-emitter saturation voltage : VCE(sat)=(–)0.4V max/IC=(–)3A, IB=(–)0.3A. ( ) : 2SB824 JEDEC : TO-220AB EIAJ : SC-46 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Volt
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2SD1060 ON Semiconductor
ON Semiconductor
  Bipolar Transistor

Ordering number : EN686K 2SD1060 Bipolar Transistor 50V, 5A, Low VCE(sat) NPN TO-220-3L http://onsemi.com Applications • Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching Features • Low collector-to-emitter saturation voltage : VCE(sat)=0.3V max / IC=3A, IB= 0.3A Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Di
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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