|
2SD1060 даташитФункция этой детали – «NPN Epitaxial Planar SilICon Transistor». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
2SD1060 | Unisonic Technologies |
NPN EPITAXIAL PLANAR SILICON TRANSISTOR UTC 2SD1060
NPN EPITAXIAL PLANAR TRANSISTOR
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
FEATURE
*Low collector-to-emitter saturation voltage: VCE(sat)=0.4V max/IC=3A, IB=0.3A
1
APPLICATIONS
*Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching.
SOT-89
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation |
|
2SD1060 | SavantIC |
SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1060
DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Complement to type 2SB824 APPLICATIONS ·Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Col |
|
2SD1060 | Sanyo Semicon Device |
50V/5A Switching Applications Ordering number:686I
PNP/NPN Epitaxial Planar Silicon Transistors
2SB824/2SD1060
50V/5A Switching Applications
Applications
· Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching.
Package Dimensions
unit:mm 2010C
[2SB824/2SD1060]
Features
· Low collector-to-emitter saturation voltage : VCE(sat)=(–)0.4V max/IC=(–)3A, IB=(–)0.3A.
( ) : 2SB824
JEDEC : TO-220AB EIAJ : SC-46
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Volt |
|
2SD1060 | ON Semiconductor |
Bipolar Transistor Ordering number : EN686K
2SD1060
Bipolar Transistor
50V, 5A, Low VCE(sat) NPN TO-220-3L
http://onsemi.com
Applications
• Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching
Features
• Low collector-to-emitter saturation voltage : VCE(sat)=0.3V max / IC=3A, IB= 0.3A
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Collector Di |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |