даташит 2SC5929 IC Даташиты PDF

	Номер в каталоге	Описание	Производители	PDF
1	2SC5929	Silicon Transistor	ETC

2SC даташита ( переписка )

Номер в каталоге	Описание	Производители	PDF
2SC4501L	Silicon NPN Epitaxial 2SC4501(L)/(S) Silicon NPN Epitaxial Application High gain amplifier and medium speed switching Outline DPAK 4 4 1 2 3 12 1. Base 2. Collector 3. Emitter 4. Collector 2, 4 1 S Type 3 3 L Type Free Datasheet http:/// 2SC4501(L)/(S) Absolute Maximum Ra	Renesas
2SC4603R	Ratigns and Caracteristics of Fuji Power Transistor	Fuji Electric
2SC5191-T1	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DATA SHEET SILICON TRANSISTOR 2SC5191 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz �	NEC
2SC3483	NPN Triple Diffused Planar Type Silicon Transistor	Sanyo Semicon Device
2SC4332	Silicon NPN Power Transistor isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4332 DESCRIPTION ·Low collector saturation voltage ·Fast switching speed ·High DC current gain and excellent linearity ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliabl	Inchange Semiconductor
2SC5077A	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) Power Transistors 2SC5077, 2SC5077A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Features q q q q q 4.1±0.2 8.0±0.2 Solder Dip High-speed switching High collector to base voltage VC	Panasonic Semiconductor
2SC5619	SMALL-SIGNAL TRANSISTOR ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION	Isahaya Electronics
2SC4585	(2SCxxxx) TRANSISTOR	Shindengen Electric
2SC2769	Trans GP BJT NPN 200V 10A 3-Pin(3+Tab) TO-3P	New Jersey Semiconductor
2SCR553P5	Middle Power Transistors 2SCR553P5 Midium Power Transistors (50V / 2A) Parameter VCEO IC Value 50V 2A lFeatures 1)Low saturation voltage, typically VCE(sat)=0.13V(Max.)(IC/IB=700mA/35mA) 2)High speed switching lOutline 　 SOT-89 　 SC-62 MPT3 lInner circuit 　　　　　 Datasheet lApplica	ROHM Semiconductor

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Последние обновления

Номер в каталоге	Описание	Производители	PDF
CD4515BC	The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors.	Fairchild Semiconductor
HV101WU1-1E6	HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices.	HYDIS

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свойства компонента (features), его основные параметры (quick reference data), обозначение на принципиальных схемах (symbol), краткое описание (general description).

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