|
|
|
даташит 2SC5929 IC Даташиты PDF |
| Номер в каталоге | Описание | Производители | ||
| 1 | 2SC5929 | Silicon Transistor |
 ETC |
 |
2SC даташита ( переписка ) |
| Номер в каталоге | Описание | Производители | |
| 2SC2713 | Silicon NPN Epitaxial Type SMD Type
Silicon NPN Epitaxial Type 2SC2713
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors
Unit: mm
Features
+0.1 2.4-0.1
High voltage VCEO=120V High hFE Low noise. Small package.
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Bas |
 Kexin |
 |
| 2SC458 | Trans GP BJT NPN 30V 0.1A 3-Pin TO-92 |
 New Jersey Semiconductor |
|
| 2SC4292 | NPN triple diffused planar silicon transistor |
 Sanyo |
|
| 2SC3970A | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3970 2SC3970A
DESCRIPTION ·With TO-220Fa package ·High speed switching ·High VCBO ·Wide area of safe operation APPLICATIONS ·For high breakdown voltate ,high-speed switching |
 SavantIC |
|
| 2SC3688 | Trans GP BJT NPN 800V 10A 3-Pin(3+Tab) TO-3PB |
New Jersey Semiconductor |
|
| 2SC5637 | Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Ordering number:ENN6465
NPN Triple Diffused Planar Silicon Transistor
2SC5637
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). |
 Sanyo Semicon Device |
|
| 2SC5896 | Silicon NPN epitaxial planar type Power Transistors
2SC5896
Silicon NPN epitaxial planar type
Power supply for Audio & Visual equipments such as TVs and VCRs Industrial equipments such as DC-DC converters ■ Features
• High-speed switching (tstg: storage time/tf: fall time is short) • Low collector-emitter |
 Panasonic Semiconductor |
|
| 2SCR574D | NPN 2.0A 80V Middle Power Transistor 2SCR574D
NPN 2.0A 80V Middle Power Transistor
Parameter
VCEO IC
Value
80V 2A
lFeatures
1) Suitable for Middle Power Driver. 2) Complementary PNP Types : 2SAR574D. 3) Low VCE(sat) VCE(sat)=300mV(Max.). (IC/IB=1A/50mA)
lOutline
CPT
TO-252 SC-63 |
 ROHM Semiconductor |
|
| 2SC4180 | TRANSISTOR 2 SC4180 TRANSISTOR (NPN)
FEATURES High DC Current Gain APPLICATIONS General Purpose Amplification MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage C |
 Jin Yu Semiconductor |
|
| 2SC5585F | NPN Silicon General Purpose Transistor 2SC5585F
Elektronische Bauelemente
RoHS Compliant Product
High Current Low VCE(sat) - VCE(sat)İ 250mV at IC = 200mA/IB=10mA A
NPN Silicon General Purpose Transistor
FEATURES
SOT-523 Dim A B C D
S
2 3 Top View 1
Min 1.50 0.78 0.80 0.28 0.90 0.00 0.10 0.35 |
 SeCoS |
|
Ссылка Поделиться :
Последние обновления
| Номер в каталоге | Описание | Производители | |
| CD4515BC | The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors. |
 Fairchild Semiconductor |
|
| HV101WU1-1E6 | HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices. |
 HYDIS |
|
|
На первой странице data sheets приводятся: |
| DataSheet26.com | 2020 | Контакты |