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даташит 2SC5929 IC Даташиты PDF |
| Номер в каталоге | Описание | Производители | ||
| 1 | 2SC5929 | Silicon Transistor |
 ETC |
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2SC даташита ( переписка ) |
| Номер в каталоге | Описание | Производители | |
| 2SC2713 | Silicon NPN Epitaxial Type SMD Type
Silicon NPN Epitaxial Type 2SC2713
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors
Unit: mm
Features
+0.1 2.4-0.1
High voltage VCEO=120V High hFE Low noise. Small package.
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Bas |
 Kexin |
 |
| 2SC4622 | Trans GP BJT 400V 7A 3-Pin(3+Tab) TO-220AB |
 New Jersey Semiconductor |
|
| 2SC4797 | Silicon NPN Triple Diffused 2SC4797
Silicon NPN Triple Diffused
Application
TV / character display horizontal deflection output
TO–3PFM
Features
• High speed switching tf ≤ 0.6 µs • High breakdown voltage VCBO = 1700 V • Isolated package TO–3PFM
1 2 3
1. Base 2. Collector 3. Emitter
Absolu |
 Hitachi Semiconductor |
|
| 2SC3496A | NPN Silicon Triple Diffused Transistor SMD Type
Transistors
NPN Silicon Triple Diffused Transistor 2SC3496A
TO-252
+0.15 1.50 -0.15
Unit: mm
+0.1 2.30-0.1 +0.8 0.50-0.7
+0.15 6.50-0.15 +0.2 5.30-0.2
Features
High-speed switching
+0.2 9.70 -0.2
High collector-base voltage (Emitter open) VCBO Satisfactory linearity |
Kexin |
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| 2SC5890 | Silicon NPN RF Transistor INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC5890
DESCRIPTION ·High Gain Bandwidth Product
fT = 7.8 GHz TYP. ·High power gain and low noise figure ;
PG = 12 dB TYP., NF = 1.0 dB typ. @ f = 900 MHz
APPLICATIONS ·Designed for use in UHF |
 Inchange Semiconductor |
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| 2SC6141 | AF100W Output Applications Ordering number : ENA1288
2SA2221/2SC6141
SANYO Semiconductors
DATA SHEET
2SA2221/2SC6141
Applications
•
PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor
230V / 15A, AF100W Output Applications
230V / 15A, AF100W ou |
 Sanyo Semicon Device |
|
| 2SC4332-Z | NPN Silicon Epitaxia SMD Type
NPN Silicon Epitaxia 2SC4332-Z
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
Low collector saturation voltage. Fast switching speed.
+0.2 9.70 -0.2
6.50 +0.2 5.30-0.2
+0.15 -0.15
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+ |
Kexin |
|
| 2SC5382 | (2SCxxxx) TRANSISTOR |
 Shindengen Electric |
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| 2SCR513PFRA | NPN 1.0A 50V Middle Power Transistor 22SSCCRR551133PPFRA
NPN 1.0A 50V Middle Power Transistor
Parameter
VCEO IC
Value
50V 1.0A
lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 22SSAARR551133PPFRA 3) Low VCE(sat)
VCE(sat)=0.35V(Max.) (IC/IB=500mA/25mA)
4) Lead Free/RoHS Compliant.
lOutli |
 ROHM Semiconductor |
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| 2SC2333 | Trans GP BJT NPN 400V 2A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
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На первой странице data sheets приводятся: |
| DataSheet26.com | 2020 | Контакты |