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2SC4738 даташит

Функция этой детали – «NPN PlastIC Encapsulated Transistor».



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Номер в каталоге Производители Описание PDF
2SC4738 WEJ
WEJ
  NPN EPITAXIAL SILICON TRANSISTOR

RoHS 2SC4738 2SC4738 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 0.1 W (Tamb=25℃) .,LCollector current ICM: 0.15 Collector-base voltage A OV(BR)CBO: 60 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-523 1. BASE 2. EMITTER 3. COLLECTOR ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter NCollector-base breakdown voltage Collector-emitter breakdown voltage OEmitter-base breakdown voltage RCollector cut-off current TEmitter cut-off curre
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2SC4738 Weitron
Weitron
  NPN TRANSISTOR

2SC4738 NPN TRANSISTOR P b Lead(Pb)-Free 1 3 2 FEATURES: High voltage and high current Excellent h FE linearity High h FE Complementary to 2SA1832 MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current –Continuous Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ Tstg Value 60 50 5 150 100 125 -55-125 SOT-523(SC-75) Units V V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25�
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2SC4738 Toshiba Semiconductor
Toshiba Semiconductor
  Silicon NPN Epitaxial Type TRANSISTOR

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4738 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 120~700 • Complementary to 2SA1832 • Small package 2SC4738 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base
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2SC4738 SeCoS
SeCoS
  NPN Plastic Encapsulated Transistor

2SC4738 Elektronische Bauelemente 0.15A , 60V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High Voltage and High Current High DC Current Gain Complementary to 2SA1832 A M 3 SOT-523 3 Top View C B 1 2 2 CLASSIFICATION OF hFE Product-Rank Range Marking 2SC4738-Y 120~240 LY 2SC4738-GR 2SC4738-BL 200~400 LG 350~700 LL F K 1 L E D G REF. Millimeter Min. Max. 1.5 1.7 1.45 1.75 0.75 0.85 0.7 0.9 0.9 1.1 0.15 0.25 H J Millimeter Min. Max. 0.1
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2SC4738 Kexin
Kexin
  Silicon NPN Epitaxial Planar type

SMD Type Silicon NPN Epitaxial Planar type 2SC4738 Transistors SOT-523 +0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05 Unit: mm +0.01 0.1-0.01 2 1 +0.15 1.6-0.15 High voltage and high current:VCE=50V,IC=150mA(Max.) Excellent hFE linearity :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) High hFE: =120 to 700 +0.25 0.3-0.05 0.5 +0.1 -0.1 0.35 3 1. Base +0.05 0.75-0.05 +0.1 0.8-0.1 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector
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2SC4738F Toshiba Semiconductor
Toshiba Semiconductor
  Silicon NPN Epitaxial Type TRANSISTOR

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4738F 2SC4738F Audio Frequency General Purpose Amplifier Applications · High voltage and high current: VCEO = 50 V, IC = 150 mA (max) · Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) · High hFE: hFE = 120~400 · Complementary to 2SA1832F · Small package Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power di
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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