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2SC4738 даташитФункция этой детали – «NPN PlastIC Encapsulated Transistor». |
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Номер в каталоге | Производители | Описание | |
2SC4738 | WEJ |
NPN EPITAXIAL SILICON TRANSISTOR RoHS 2SC4738
2SC4738 TRANSISTOR (NPN)
DFEATURES Power dissipation
TPCM:
0.1 W (Tamb=25℃)
.,LCollector current
ICM: 0.15 Collector-base voltage
A
OV(BR)CBO:
60 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
SOT-523
1. BASE 2. EMITTER 3. COLLECTOR
ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
NCollector-base breakdown voltage
Collector-emitter breakdown voltage
OEmitter-base breakdown voltage RCollector cut-off current TEmitter cut-off curre |
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2SC4738 | Weitron |
NPN TRANSISTOR 2SC4738
NPN TRANSISTOR
P b Lead(Pb)-Free
1 3 2
FEATURES: High voltage and high current Excellent h FE linearity High h FE Complementary to 2SA1832 MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current –Continuous Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ Tstg Value 60 50 5 150 100 125 -55-125
SOT-523(SC-75)
Units V V V mA mW ℃ ℃
ELECTRICAL CHARACTERISTICS (Tamb=25� |
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2SC4738 | Toshiba Semiconductor |
Silicon NPN Epitaxial Type TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4738
Audio Frequency General Purpose Amplifier Applications
• High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)
= 0.95 (typ.) • High hFE: hFE = 120~700 • Complementary to 2SA1832 • Small package
2SC4738
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 60 V
Collector-emitter voltage
VCEO 50 V
Emitter-base |
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2SC4738 | SeCoS |
NPN Plastic Encapsulated Transistor 2SC4738
Elektronische Bauelemente 0.15A , 60V NPN Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
High Voltage and High Current High DC Current Gain Complementary to 2SA1832
A
M
3
SOT-523
3
Top View
C B
1 2 2
CLASSIFICATION OF hFE
Product-Rank Range Marking 2SC4738-Y 120~240 LY 2SC4738-GR 2SC4738-BL 200~400 LG 350~700 LL
F K
1
L
E D G
REF. Millimeter Min. Max. 1.5 1.7 1.45 1.75 0.75 0.85 0.7 0.9 0.9 1.1 0.15 0.25
H
J
Millimeter Min. Max. 0.1 |
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2SC4738 | Kexin |
Silicon NPN Epitaxial Planar type SMD Type
Silicon NPN Epitaxial Planar type 2SC4738
Transistors
SOT-523
+0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05
Unit: mm
+0.01 0.1-0.01
2
1
+0.15 1.6-0.15
High voltage and high current:VCE=50V,IC=150mA(Max.) Excellent hFE linearity :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) High hFE: =120 to 700
+0.25 0.3-0.05
0.5
+0.1 -0.1
0.35
3
1. Base
+0.05 0.75-0.05 +0.1 0.8-0.1
2. Emitter 3. Collecter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector |
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2SC4738F | Toshiba Semiconductor |
Silicon NPN Epitaxial Type TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4738F
2SC4738F
Audio Frequency General Purpose Amplifier Applications
· High voltage and high current: VCEO = 50 V, IC = 150 mA (max) · Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) · High hFE: hFE = 120~400 · Complementary to 2SA1832F · Small package
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power di |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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