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Datasheet 2SC410 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 17 | 2SC4102 | High-voltage Amplifier Transistor(120V/ 50mA) 2SC4102 / 2SC3906K / 2SC2389S
Transistors
High-voltage Amplifier Transistor (120V, 50mA)
2SC4102 / 2SC3906K / 2SC2389S
!Features 1) High breakdown voltage. (BVCEO = 120V) 2) Complements the 2SA1579 / 2SA1514K / 2SA1038S. !External dimensions (Units : mm)
2SC4102
(1)
0.65 0.65 0.7 0.8
0.3
(3)
1. |
 ROHM Semiconductor |
 |
| 16 | 2SC4102 | High-voltage Amplifier Transistor SMD Type
High-voltage Amplifier Transistor 2SC4102
Transistors
Features
High breakdown voltage.(VCEO = 120V)
1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation |
 Kexin |
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| 15 | 2SC4102 | TRANSISTOR 2SC4102 TRANSISTOR (NPN)
FEATURES High Breakdown Voltage Complements the 2SA1579 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissi |
 Jin Yu Semiconductor |
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| 14 | 2SC4102W | Silicon Epitaxial Planar Transistor BL Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
z z Excellent hFE linearity. Power dissipation:PCM=200mW
Production specification
2SC4102W
Pb
Lead-free
APPLICATIONS
z NPN Silicon Epitaxial Planar Transistor. SOT-323
ORDERING INFORMATION
Type No. 2SC4102W Marking CP/CQ/CR
Pack |
 Galaxy Semi-Conductor |
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