|
2SC4003 даташитФункция этой детали – «PlastIC-encapsulated Transistors». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
2SC4003 | WEJ |
NPN Transistor |
|
2SC4003 | TRANSYS |
Plastic-Encapsulated Transistors Transys
Electronics
L I M I T E D
TO-251 Plastic-Encapsulated Transistors
2SC4003
TRANSISTOR (NPN)
TO-251
FEATURES Power dissipation PCM: 1 W (Tamb=25℃)
1. BASE 2. COLLECTOR 3. EMITTER
Collector current 200 mA ICM: Collector-base voltage 400 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-of |
|
2SC4003 | Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor Ordering number : ENN2959B
2SC4003
2SC4003
NPN Triple Diffused Planar Silicon Transistor
High-Voltage Driver Applications
Features
• High breakdown voltage. • Adoption of MBIT process. • Excellent hFE linearity.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Collector Dissipation
Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO
IC ICP
PC
Tj Tstg
Tc=25°C
E |
|
2SC4003 | LGE |
NPN Transistor 2SC4003(NPN)
TO-251/TO-252-2L Transistor
TO-251
1. BASE
2. COLLECTOR
1 23
3. EMITTER
Features
High hFE
hFE=60 to 200
low VCE(sat) VCE(sat)=0.6V
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
TO-252-2L
Symbol
Parameter
Value
Units
VCBO VCEO VEBO IC PC TJ Tstg
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
400 400
5 0.2 1 150 -55-150
V V V A W ℃ ℃
Dimensions in inches and (mil |
|
2SC4003 | KEXIN |
NPN Triple Diffused Planar Silicon Transistor
SMD Type
Transistors
NPN Triple Diffused Planar Silicon Transistor 2SC4003
TO-252
+0.15 1.50 -0.15
Unit: mm
+0.1 2.30-0.1 +0.8 0.50-0.7
Features
High breakdown voltage
+0.2 9.70 -0.2
+0.15 6.50-0.15 +0.2 5.30-0.2
+0.1 0.80-0.1
+0.15 0.50 -0.15
Excellent hFE linearity
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector to base voltage Collector to emitter voltage |
|
2SC4003 | Inchange Semiconductor |
Silicon NPN Power Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4003
DESCRIPTION ·High hFE ·Low collector-to-emitter saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
400 V
VCEO
Collector-Emitter Voltage
400 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous 0.2 A
PC Collector Power D |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |