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2SC4003 даташит

Функция этой детали – «PlastIC-encapsulated Transistors».



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Номер в каталоге Производители Описание PDF
2SC4003 WEJ
WEJ
  NPN Transistor

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2SC4003 TRANSYS
TRANSYS
  Plastic-Encapsulated Transistors

Transys Electronics L I M I T E D TO-251 Plastic-Encapsulated Transistors 2SC4003 TRANSISTOR (NPN) TO-251 FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3. EMITTER Collector current 200 mA ICM: Collector-base voltage 400 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-of
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2SC4003 Sanyo Semicon Device
Sanyo Semicon Device
  NPN Triple Diffused Planar Silicon Transistor

Ordering number : ENN2959B 2SC4003 2SC4003 NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • High breakdown voltage. • Adoption of MBIT process. • Excellent hFE linearity. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C E
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2SC4003 LGE
LGE
  NPN Transistor

2SC4003(NPN) TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 1 23 3. EMITTER Features High hFE hFE=60 to 200 low VCE(sat) VCE(sat)=0.6V MAXIMUM RATINGS (TA=25℃ unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature 400 400 5 0.2 1 150 -55-150 V V V A W ℃ ℃ Dimensions in inches and (mil
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2SC4003 KEXIN
KEXIN
  NPN Triple Diffused Planar Silicon Transistor

SMD Type Transistors NPN Triple Diffused Planar Silicon Transistor 2SC4003 TO-252 +0.15 1.50 -0.15 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features High breakdown voltage +0.2 9.70 -0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 Excellent hFE linearity 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage
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2SC4003 Inchange Semiconductor
Inchange Semiconductor
  Silicon NPN Power Transistor

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4003 DESCRIPTION ·High hFE ·Low collector-to-emitter saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 0.2 A PC Collector Power D
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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