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2SC3356 даташитФункция этой детали – «SilICon NPN Transistor». |
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Номер в каталоге | Производители | Описание | |
2SC3356 | Weitron |
High-Frequency Amplifier Transistor NPN Silicon 2SC3356
High-Frequency Amplifier Transistor NPN Silicon
P b Lead(Pb)-Free
FEATURES
* Low noise amplifier at VHF, UHF and CATV band. * Low Noise and High Gain * High Power Gain
1 2 3
1. BASE 2. EMITTER 3. COLLECTOR
SOT-23
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 20 12 3 0.1 0.25 150 -55-150 |
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2SC3356 | Unisonic Technologies |
NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD
2SC3356
NPN SILICON TRANSISTOR
HIGH FREQUENCY LOW NOISE AMPLIFIER
DESCRIPTION
The UTC 2SC3356 is designed for such applications as: DC/DC converters, supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low supply voltage applications (e.g. lamps and LEDs) and inductive load driver (e.g. relays, buzzers and motors).
FEATURES
* Low Noise and High Gain * High Power Gain
ORDERING INFORMATION
Ordering Number Lead Free
2SC3356L-x-AE3-R
Package S |
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2SC3356 | SeCoS |
NPN Silicon Plastic-Encapsulate Transistor 2SC3356
Elektronische Bauelemente
NPN Silicon Plastic-Encapsulate Transistor
A suffix of "-C" specifies halogen & lead-free
SOT-23 Dim
A
Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450
Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600
A
L
FEATURES
n
3.COLLECTOR
3
B C
B S
2
Power Dissipation RoHS Compliant Product
1.BASE 2.EMITTER
Top View
1
D G H J K L S V
n
V
G
C D H K J
All Dimension in mm
MAXIMUM RATINGS* TA=25 C unless otherwise noted
Symbol VCBO VCEO VEBO |
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2SC3356 | Renesas |
NPN Silicon RF Transistor PreliminaryData Sheet
2SC3356
R09DS0021EJ0300
NPN Silicon RF Transistor
Rev.3.00
NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold
Jun 28, 2011
FEATURES
• Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
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2SC3356 | NEC |
MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR) DATA SHEET SHEET DATA
SILICON TRANSISTOR
2SC3356
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.
0.4 −0.05
+0.1
PACKAGE DIMENSIONS (Units: mm)
2.8±0.2 1.5 0.65 −0.15
+0.1
FEATURES
• Low Noise and High Gain
0.95 0.95 2.9±0.2
NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz • High Power Gain MAG = |
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2SC3356 | LGE |
NPN Transistor 2SC3356
SOT-23-3L Transistor(NPN)
1. BASE
2. EMITTER
3. COLLECTOR
Features
Low noise amplifier at VHF, UHF and CATV band. Low Noise and High Gain High Power Gain
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg
Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
Value 20 12 3 0.1 0.25 150
-55-150
Units V V V A W ℃ ℃
SOT-23-3L
2.92 0.35
1 |
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2SC3356 | Kexin |
NPN Silicon Epitaxial Transistor SMD Type
NPN Silicon Epitaxial Transistor 2SC3356
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors
Unit: mm
Features
+0.1 2.4-0.1
NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
+0.1 1.3-0.1
Low noise and high gain.
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector to base voltage Collector to emitter voltage Emitter |
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2SC3356 | Jin Yu Semiconductor |
TRANSISTOR 2SC3356
TRANSISTOR (NPN)
FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃)
SOT-23-3L
1. BASE 2. EMITTER 3. COLLECTOR
1. 02 0. 025 0. 95¡ À
TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Noise figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE
unless otherwise specified)
Test conditions MIN 20 12 |
[1]  [2]
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |