DataSheet26.com


2SC3356 даташит

Функция этой детали – «SilICon NPN Transistor».



Показать результаты поиска

scroll
Номер в каталоге Производители Описание PDF
2SC3356 Weitron
Weitron
  High-Frequency Amplifier Transistor NPN Silicon

2SC3356 High-Frequency Amplifier Transistor NPN Silicon P b Lead(Pb)-Free FEATURES * Low noise amplifier at VHF, UHF and CATV band. * Low Noise and High Gain * High Power Gain 1 2 3 1. BASE 2. EMITTER 3. COLLECTOR SOT-23 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 20 12 3 0.1 0.25 150 -55-150
pdf
2SC3356 Unisonic Technologies
Unisonic Technologies
  NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 2SC3356 NPN SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER „ DESCRIPTION The UTC 2SC3356 is designed for such applications as: DC/DC converters, supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low supply voltage applications (e.g. lamps and LEDs) and inductive load driver (e.g. relays, buzzers and motors). „ FEATURES * Low Noise and High Gain * High Power Gain „ ORDERING INFORMATION Ordering Number Lead Free 2SC3356L-x-AE3-R Package S
pdf
2SC3356 SeCoS
SeCoS
  NPN Silicon Plastic-Encapsulate Transistor

2SC3356 Elektronische Bauelemente NPN Silicon Plastic-Encapsulate Transistor A suffix of "-C" specifies halogen & lead-free SOT-23 Dim A Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 A L FEATURES n 3.COLLECTOR 3 B C B S 2 Power Dissipation RoHS Compliant Product 1.BASE 2.EMITTER Top View 1 D G H J K L S V n V G C D H K J All Dimension in mm MAXIMUM RATINGS* TA=25 C unless otherwise noted Symbol VCBO VCEO VEBO
pdf
2SC3356 Renesas
Renesas
  NPN Silicon RF Transistor

PreliminaryData Sheet 2SC3356 R09DS0021EJ0300 NPN Silicon RF Transistor Rev.3.00 NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold Jun 28, 2011 FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz ORDERING INFORMATION Part Number 2SC3356 2SC3356-T1B Order Number 2SC3356-A 2SC3356-T1B-A Package Quantity 3-pin Minimold 50 pcs (Non reel) (
pdf
2SC3356 NEC
NEC
  MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR)

DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 0.4 −0.05 +0.1 PACKAGE DIMENSIONS (Units: mm) 2.8±0.2 1.5 0.65 −0.15 +0.1 FEATURES • Low Noise and High Gain 0.95 0.95 2.9±0.2 NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz • High Power Gain MAG =
pdf
2SC3356 LGE
LGE
  NPN Transistor

2SC3356 SOT-23-3L Transistor(NPN) 1. BASE 2. EMITTER 3. COLLECTOR Features — Low noise amplifier at VHF, UHF and CATV band. — Low Noise and High Gain — High Power Gain MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 20 12 3 0.1 0.25 150 -55-150 Units V V V A W ℃ ℃ SOT-23-3L 2.92 0.35 1
pdf
2SC3356 Kexin
Kexin
  NPN Silicon Epitaxial Transistor

SMD Type NPN Silicon Epitaxial Transistor 2SC3356 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz +0.1 1.3-0.1 Low noise and high gain. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter
pdf
2SC3356 Jin Yu Semiconductor
Jin Yu Semiconductor
  TRANSISTOR

2SC3356 TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) SOT-23-3L 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 0. 025 0. 95¡ À TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Noise figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE unless otherwise specified) Test conditions MIN 20 12
pdf

[1]   [2]   



Последние обновления

scroll
Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

pdf
NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

pdf

Index :   

A    B    C    D    E    F    G    H    I    J  

  K    L    M    N    O    P    Q

DataSheet26.com      |     2020      |     Контакты