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Datasheet 2SC1969 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SC1969 | NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications) w
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 Mitsubishi Electric Semiconductor |
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| 2 | 2SC1969 | silicon NPN epitaxial planar type transistor Description
The Eleflow 2SC1969 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers within the HF band, ideal for mobile radio applications.
Features
• High power gain: Gpe ≥ 12dB @Vcc = 12V, Po = 16W, f = 27MHz
• Emitter ballasted construction for reliability an |
 eleflow |
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| 1 | 2SC1969 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC1969
DESCRIPTION ·High Power Gain-
: Gpe≥12dB,f= 27MHz, PO= 16W ·High Reliability
APPLICATIONS ·Designed for 10~14 watts output power class AB amplifiers
applications in HF band.
ABSOLUTE MAXIMUM RATINGS (T |
 INCHANGE |
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