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2SC1815 даташит ( Даташиты, Даташиты )

Номер в каталоге Описание Производители PDF
24 2SC1815   AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES * Collector-Emitter voltage: BVCEO=50V * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA1015 1 TO-92 *Pb-free plating product number: 2SC1815L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SC1815-x-T92-A-B 2SC1815L-x-T92-A-B 2SC1815-x-T92-A-K 2SC1815L-x-T92-A-K Package TO-92 TO-92 Pin Assignment 1 2 3 E C B E C
UTC
UTC
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23 2SC1815   NPN Transistor

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors 2SC1815 TRANSISTOR (NPN) SOT-23 FEATURES Power dissipation MARKING : 2SC1815=HF 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 60 50 5 150 200 150 -55-150 ELECTRICAL CHAR
Tuofeng Semiconductor
Tuofeng Semiconductor
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22 2SC1815   Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications)

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications 2SC1815 Unit: mm · High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) · Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) · Low noise: NF = 1dB (typ.) at f = 1 kHz · Complementary to 2SA1015 (O, Y, GR class) Maximum Ratings (Ta = 25°C) Characteristics Collector-base v
Toshiba Semiconductor
Toshiba Semiconductor
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21 2SC1815   NPN EPITAXIAL PLANAR TRANSISTOR

TIGER ELECTRONIC CO.,LTD 2SC1815 NPN EPITAXIAL PLANAR TRANSISTOR Description The 2SC1815 is designed for use in driver stage of AF amplifier general purpose amplification. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ............................................................................................... -55~+150°C Junction Temperature ..................................................................................... +150°C Maximum • Maximum Power Dissipation Total Power Dissipa
TGS
TGS
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20 2SC1815   NPN Silicon Epitaxial Planar Transistor

ST 2SC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA1015 is recommended. On special request, these transistors can be manufactured in different pin configurations. Absolute Maximum Ratings (T a = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junc
SEMTECH
SEMTECH
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19 2SC1815   NPN Type Plastic Encapsulate Transistors

2SC1815 Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free NPN Type Plastic Encapsulate Transistors TO-92 ƔFEATURES . Power Dissipation PCM: 0.4 W ( Ta = 25 к ) . Collector Current ICM: 0.15 A 1 2 3 1 2 3 . Collector-Base Voltage V(BR)CBO: 60 V 1. EMITTER 2. COLLECTOR 3. BASE ƔABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ta = 25к) TYPE NUMBER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cu
SeCoS
SeCoS
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18 2SC1815   NPN SILICON TRANSISTOR

Micro Electronics
Micro Electronics
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17 2SC1815   SILICON NPN TRANSISTOR

2SC1815(3DG1815) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于音频放大,激励级放大。 Purpose: Audio frequency general purpose ,driver stage amplifier applications. 特点:耐压高,电流大,有极好的 hFE 特性,低噪声系数,可与 2SA1015(3CG1015)互补。 Features: High voltage and high current, excellent hFE linearity ,low noise ,complementary pair with 2SA1015(3CG1015). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit VCBO 60 V
LZG
LZG
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Номер в каталоге Описание Производители PDF
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Fairchild Semiconductor
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