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2SB792 даташит

Функция этой детали – «SilICon PNP Epitaxial Planer Type(for High Breakdown Voltage».



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Номер в каталоге Производители Описание PDF
2SB792 TY Semiconductor
TY Semiconductor
  Transistor

Product specification 2SB792,2SB792A SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 High collector-emitter voltage VCEO Low noise voltage NV +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage 2SB792 2SB792A Collector-emitter voltage 2SB792 2SB792A Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storag
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2SB792 Panasonic Semiconductor
Panasonic Semiconductor
  Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)

Transistor 2SB792, 2SB792A Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD814 2.8 –0.3 +0.2 Unit: mm s Features q q q 0.65±0.15 +0.25 1.5 –0.05 0.65±0.15 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB792 2SB792A 2SB792 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2 (Ta=25˚C) +0.2 1.1 –0.1 –150 –185 –150 –185 –5 –100 –50 200 150 –55 ~ +150 emitter voltage 2SB792A Emitter to base voltage Peak collector
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2SB792 Kexin
Kexin
  Transistor

SMD Type Silicon PNP Epitaxial Planar Type 2SB792,2SB792A SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 High collector-emitter voltage VCEO Low noise voltage NV +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage 2SB792 2SB792A Collector-emitter voltage 2SB792 2SB792A Emitter-base voltage Collector current Peak collector current Collector power dissip
pdf
2SB792A TY Semiconductor
TY Semiconductor
  Transistor

Product specification 2SB792,2SB792A SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 High collector-emitter voltage VCEO Low noise voltage NV +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage 2SB792 2SB792A Collector-emitter voltage 2SB792 2SB792A Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storag
pdf
2SB792A Panasonic Semiconductor
Panasonic Semiconductor
  Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)

Transistor 2SB792, 2SB792A Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD814 2.8 –0.3 +0.2 Unit: mm s Features q q q 0.65±0.15 +0.25 1.5 –0.05 0.65±0.15 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB792 2SB792A 2SB792 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2 (Ta=25˚C) +0.2 1.1 –0.1 –150 –185 –150 –185 –5 –100 –50 200 150 –55 ~ +150 emitter voltage 2SB792A Emitter to base voltage Peak collector
pdf
2SB792A Kexin
Kexin
  Transistor

SMD Type Silicon PNP Epitaxial Planar Type 2SB792,2SB792A SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 High collector-emitter voltage VCEO Low noise voltage NV +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage 2SB792 2SB792A Collector-emitter voltage 2SB792 2SB792A Emitter-base voltage Collector current Peak collector current Collector power dissip
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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