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2SB1204 даташитФункция этой детали – «High-current Switching ApplICations». |
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Номер в каталоге | Производители | Описание | |
2SB1204 | Sanyo Semicon Device |
High-Current Switching Applications Ordering number:ENN2086B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1204/2SD1804
High-Current Switching Applications
Applications
Æ Relay drivers, high-speed inverters, converters, and other general high-current switching applications.
Package Dimensions
unit:mm 2045B
[2SB1204/2SD1804]
1.5
Features
Æ Low collector-to-emitter saturation voltage. Æ High current and high fT. Æ Excellent linearity of hFE. Æ Fast switching time. Æ Small and slim package making it easy to make 2SB1204/2SD1804-applied sets small |
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2SB1204 | ON Semiconductor |
Bipolar Transistor Ordering number : EN2086C
2SB1204
Bipolar Transistor
–50V, –8A, Low VCE(sat), PNP Single TP/TP-FA
http://onsemi.com
Applications
• Relay drivers, high-speed inverters, converters, and other general high-current switching applications
Features
• Low collector-to-emitter saturation voltage
• High current and high fT
• Excellent linearity of hFE
• Fast switching speed
• Small and slim package making it easy to make 2SB1204-applied sets smaller
Specifications
Absolute Maximum Ratings at Ta=25°C
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2SB1204 | Inchange Semiconductor |
Silicon PNP Power Transistor isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB1204
DESCRIPTION ·High current and high fT ·Small and slim package making it easy to make 2SB1204-used set smaller ·Low collector-to-emitter saturation voltage ·Excellent linearity of hFE ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·relay drivers,high speed inverters,converters and other
general high-current switching applications
ABSOLUTE MAXIMUM RATING |
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2SB1204 | Guangdong Kexin Industrial |
High-Current Switching Applications www.DataSheet.co.kr
SMD Type
High-Current Switching Applications 2SB1204
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
Low collector-to-emitter saturation voltage. High current and high fT.
+0.2 9.70 -0.2
6.50 +0.2 5.30-0.2
+0.15 -0.15
+0.1 0.80-0.1
+0.15 0.50 -0.15
Fast switching time.
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base vol |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |