|
|
Datasheet 2SA940 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SA940 | POWER TRANSISTORS(1.5A/150V/25W) A
A
A
|  Mospec Semiconductor | transistor |
| 2 | 2SA940 | PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT) 2SA940
PNP
EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT
TO-220
!
Complementary to 2SC2073
ABSOLUTE MAXIMUM RATING (Ta=25°c)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation Junction Te |  Wing Shing Computer Components | transistor |
| 3 | 2SA940 | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SA940
DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·DC Current Gain : hFE= 40-140@ IC= -0.5A ·Complement to Type 2SC2073 APPLICATIONS ·Designed for use in general purpose power ampli |  Inchange Semiconductor | transistor |
| 4 | 2SA940 | Plastic-Encapsulated Transistors Transys
Electronics
L I M I T E D
TO-220 Plastic-Encapsulated Transistors
2SA940
TRANSISTOR (PNP)
TO-220
1. BASE 2. COLLECTOR
FEATURES Power dissipation PCM : 1.5 W (Tamb=25℃)
3. EMITTER
Collector current : -1.5 A ICM Collector-base voltage V V(BR)CBO : -150 Operating and storage junction tem |  TRANSYS | transistor |
| 5 | 2SA940 | PNP Silicon Epitaxial Power Transistor 2SA940
®
2SA940
Pb Free Plating Product
Pb
PNP Silicon Epitaxial Power Transistor
FEATURES
z Complements the 2SC2073.
9.90±0.20
φ
± 60 3.
0.
20
4.50±0.20 1.30±0.20
15.70±0.20
13.08±0.20
COLLECTOR 2 BASE 1
9.19±0.20
z
Vertical Output Applications.
2.80±0.20
z
Power Amplif |  Thinki Semiconductor | transistor |
2SA Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SA0683 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
Unit: mm
■ Features
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating  Panasonic Semiconductor transistor | | |
| 2 | 2SA0684 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
Unit: mm
■ Features
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating Panasonic Semiconductor transistor | | |
| 3 | 2SA0879 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0879 (2SA879)
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SC1573 ■ Features
• High collector-emitter voltage (Base open) VCEO
0.7+0.3 –0.2
0.7±0.1
Unit: mm
5.9±0.2 4.9±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base vo Panasonic Semiconductor transistor | | |
| 4 | 2SA0885 | Transistor, Silicon PNP Epitaxial Type Power Transistors
2SA0885 (2SA885)
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency power amplification Complementary to 2SC1846 ■ Features
• Output of 3 W can be obtained by a complementary pair with 2SC1846 • TO-126B package which requires no insulation plate for installation t Panasonic Semiconductor transistor | | |
| 5 | 2SA0886 | Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary) Power Transistors
2SA0886 (2SA886)
Silicon PNP epitaxial planar type
For low-frequency power amplification Complementary to 2SC1847
φ 3.16±0.1
3.8±0.3
Unit: mm
8.0+0.5 –0.1 3.2±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter volt Panasonic Semiconductor transistor | | |
| 6 | 2SA100 | Ge PNP Drift ETC transistor | | |
| 7 | 2SA1001 | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification 2SA1001
DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -130V(Min.)
APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SY Inchange Semiconductor transistor | |
| Esta página es del resultado de búsqueda del 2SA940. Si pulsa el resultado de búsqueda de 2SA940 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |