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2SA1837 даташит ( Даташиты, Даташиты )

Номер в каталоге Описание Производители PDF
6 2SA1837   PNP EPITAXIAL SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 2SA1837 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS „ FEATURES * High Transition Frequency: fT=70MHZ (Typ.) * Complementary to UTC 2SC4793 „ ORDERING INFORMATION Order Number Lead Free Halogen-Free Package 2SA1837L-TF3-T 2SA1837G-TF3-T TO-220F 2SA1837L-TF1-T 2SA1837G-TF1-T TO-220F1 2SA1837L-TF2-T 2SA1837G-TF2-T TO-220F2 Note: Pin Assignment: B: Base C: Collector E: Emitter Pin Assignment 123 BCE BCE BCE Packing Tu
UTC
UTC
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5 2SA1837   Silicon PNP Epitaxial Type Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1837 Power Amplifier Applications Driver Stage Amplifier Applications 2SA1837 Unit: mm • High transition frequency: fT = 70 MHz (typ.) • Complementary to 2SC4793 Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating −230
Toshiba Semiconductor
Toshiba Semiconductor
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4 2SA1837   SILICON PNP TRANSISTOR

2SA1837(3CA1837) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于一般功率放大和驱动级放大。 Purpose: Power amplifier, driver stage amplifier applications. 特点: 特征频率高,与 2SC4793(3DA4793)互补。 Features: High transition frequency, complementary to 2SC4793(3DA4793). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit VCBO -230 V VCEO -230 V VEBO -5.0 V IC -1.0 A IB -0.1 A PC(Ta=25℃) 2.0 W PC(Tc=25℃) 20 W
LZG
LZG
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3 2SA1837   PNP Epitaxial Silicon Transistor

PNP PNP Epitaxial Silicon Transistor R NPN 2SA1837 VCEO=-230V (min) 2SC4793 fT=70MHz(Typ.) RoHS Package APPLICATIONS Power Amplifier Applications FEATURES High collector voltage VCEO=-230V (min) Complementary to 2SC4793 High transition frequency :fT=70MHz(Typ.) RoHS product TO-220MF 不ORDER MESSAGE不 Order codes 2SA1837-O-MF-N-B Marking 2SA1837 Halogen Free Package NO TO-220MF Packaging Tube ABSOLUTE RATINGS (Tc=25℃ unless otherwise noted) Parameter — Collector- Emitter Voltage — Collector- Emitter Volt
JILIN SINO
JILIN SINO
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2 2SA1837   POWER TRANSISTOR

www.DataSheet4U.net INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1837 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -230V(Min) ·High Current-Gain Bandwidth Product ·Complement to Type 2SC4793 APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO IC Emitter-Base Voltage -5 V Colle
Inchange Semiconductor
Inchange Semiconductor
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1 2SA1837AF   High Frequency PNP Power Transistor

SEMICONDUCTOR 2SA1837AF High Frequency PNP Power Transistor -1A/-230V/20W RoHS RoHS Nell High Power Products FEATURES High transition frequency: f T = 70MHz (typ.) Complementary to 2SC4793AF TO-220F package which can be installed to the heat sink with one screw BC E TO-220F (2SA1837AF) C (2) B (1) APPLICATIONS Power amplifier Driver stage amplifier PNP E (3) ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL VCBO V CEO V EBO IC I CM (I cp ) IB PC TJ T STG PARAMETER Collector to base voltage
NELL SEMICONDUCTOR
NELL SEMICONDUCTOR
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Номер в каталоге Описание Производители PDF
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Fairchild Semiconductor
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