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Datasheet 2SA1225 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | 2SA1225 | Silicon PNP Power Transistor isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1225
DESCRIPTION ·High transition frequency ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation ·Complementary to 2SC2983
APPLICATIONS ·Power amplifier applications ·Driver stag |
Inchange Semiconductor |
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1 | 2SA1225 | Silicon PNP Epitaxial Type Transistor TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1225
Power Amplifier Applications Driver Stage Amplifier Applications
2SA1225
Unit: mm
• High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SC2983
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rat |
Toshiba Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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