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2N7002T даташит ( Даташиты, Даташиты )

Номер в каталоге Описание Производители PDF
6 2N7002T   N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 2N7002T 300mA, 60V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N7002T uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Package 2N7
Unisonic Technologies
Unisonic Technologies
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5 2N7002T   Small Signal MOSFET

Elektronische Bauelemente 2N7002T 115 mAMPS, 60VOLTS, RDS(on)=7.5 W Small Signal MOSFET RoHS Compliant Product Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–523 MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) Symbol VDSS VDGR Value 60 60 Unit Vdc Vdc VGS VGSM ±ā20 ±ā40 Vdc Vpk N–Channel 3 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board (Note 3.) TA = 2
SeCoS
SeCoS
pdf
4 2N7002T   N-Channel MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2N7002T MOSFET (N-Channel) V(BR)DSS 60 V RDS(on)MAX  5Ω@10V  7Ω@5V   ID 115mA SOT-523 3 1. GATE 2. SOURCE 3. DRAIN 1 2 FEATURE z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability MARKING K72 APPLICATION z Load Switch for Portable Devices z DC/DC Converter Equivalent Circuit K72= Device Code Solid dot = Green molding compound d
JCET
JCET
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3 2N7002T   N-Channel Enhancement Mode Field Effect Transistor

2N7002T — N-Channel Enhancement Mode Field Effect Transistor October 2007 2N7002T N-Channel Enhancement Mode Field Effect Transistor Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant D S G SOT - 523F Marking : AA Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Symbol Parameter Value VDSS VDGR VGSS Drain-Source Voltage Drain-Gate Voltage RG
Fairchild Semiconductor
Fairchild Semiconductor
pdf
2 2N7002T   N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

2N7002T N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · · · · · · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package SOT-523 TOP VIEW A D B C G G S NEW PRODUCT Dim A B C D G H N M Min 0.15 0.75 1.45 ¾ 0.90 1.50 0.00 0.60 0.10 0.10 0.45 0° Max 0.30 0.85 1.75 ¾ 1.10 1.70 0.10 0.80 0.30 0.20 0.65 8° Typ 0.22 0.80 1.60 0.50 1.00 1.60 0.05 0.75 0.22 0.12 0.50 ¾ Mechanical Data
Diodes Incorporated
Diodes Incorporated
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1 2N7002TB   60V N-CHANNEL ENHANCEMENT MODE MOSFET

2N7002TB 60V N-CHANNEL ENHANCEMENT MODE MOSFET FEATURES • RDS(ON), VGS@10V,IDS@500mA=5Ω • RDS(ON), VGS@4.5V,IDS@50mA=7.5Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. • Lead free in compliance with EU RoHS 2011/65/EU directive • Green molding compound as per IEC61249 Std.. (Halogen Free) MECHANICAL DATA • Case: SOT-523, Plast
Pan Jit International
Pan Jit International
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Номер в каталоге Описание Производители PDF
CD4515BC

The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors. These circuits are primarily used in decoding applications where low power dissipation and/or high noise immunity is required.

Fairchild Semiconductor
Fairchild Semiconductor
pdf
HV101WU1-1E6

HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices. This module has a 10.1 inch diagonally measured active area with WUXGA resolutions (1920 horizontal by 1200 vertical pixel array).

HYDIS
HYDIS
pdf

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