|
2N7002P даташитФункция этой детали – «360ma N-channel Trench Mosfet». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
2N7002P | NXP Semiconductors |
360mA N-channel Trench MOSFET 2N7002P
60 V, 360 mA N-channel Trench MOSFET
Rev. 02 — 29 July 2010 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
AEC-Q101 qualified Logic-level compatible Trench MOSFET technology Very fast switching
1.3 Applications
High-speed line driver Low-side loadswitch Relay driver Switching circuits |
|
2N7002PS | NXP Semiconductors |
MOSFET ( Transistor ) 2N7002PS
60 V, 320 mA N-channel Trench MOSFET
Rev. 1 — 1 July 2010 Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified
1.3 Applications
Relay driver High-speed line driver Low-side loadswitch Switching c |
|
2N7002PT | NXP Semiconductors |
MOSFET ( Transistor ) 2N7002PT
60 V, 310 mA N-channel Trench MOSFET
Rev. 1 — 2 July 2010 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified
1.3 Applications
Relay driver High-speed line driver Low-side loadswitch Switching cir |
|
2N7002PV | NXP Semiconductors |
MOSFET ( Transistor ) 2N7002PV
60 V, 350 mA N-channel Trench MOSFET
Rev. 1 — 5 August 2010 Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified
1.3 Applications
Relay driver High-speed line driver Low-side loadswitch S |
|
2N7002PW | NXP Semiconductors |
MOSFET ( Transistor ) 2N7002PW
60 V, 310 mA N-channel Trench MOSFET
Rev. 02 — 29 July 2010 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
AEC-Q101 qualified Logic-level compatible Trench MOSFET technology Very fast switching
1.3 Applications
High-speed line driver Low-side loadswitch Relay driver Switching circ |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |