|
2N7002KW даташитФункция этой детали – «60v N-channel Enhancement Mode Mosfet». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
2N7002KW | Unisonic Technologies |
N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 2N7002KW
300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET
DESCRIPTION
The UTC 2N7002KW uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications.
FEATURES
* Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF) * ESD Protected * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
SYMBOL
3.Drain
Power M |
|
2N7002KW | SeCoS |
N-Ch Small Signal MOSFET Elektronische Bauelemente
2N7002KW
115mA , 60V, RDS(ON) 4 N-Ch Small Signal MOSFET with ESD Protection
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
RDS(ON), VGS@10V, IDS@500mA=3 RDS(ON), [email protected], IDS@200mA=4 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition Specially Designed for Battery Operated Systems,
Solid-State Relays Drivers:Relays, Displays, Lamps, Solenoids |
|
2N7002KW | Pan Jit International |
60V N-Channel Enhancement Mode MOSFET 2N7002KW
60V N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω
• Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. • ESD Protected 2KV HBM • Component are in compliance with EU RoHS 2002/95/EC directives
MECHANICALDA |
|
2N7002KW | JCET |
N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate MOSFETS
2N7002KW
V(BR)DSS
9
N-Channel MOSFET RDS(on)MAX
ȍ#9
ȍ#9
ID
P$
SOT-323
3
1. GATE
2. SOURCE
1
3. DRAIN
2
FEATURE z High density cell design for Low RDS(on) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability z ESD protected
M$5.,1*
APPLICATION z /RDG 6ZLWFK IRU 3RUWDEOH 'HYLFHV z '&'& &RQYHUWHU
Equivalent Circuit
MOSFET MAXIMUM RATINGS (Ta=25Я unless otherw |
|
2N7002KW | Fairchild Semiconductor |
N-Channel Enhancement Mode Field Effect Transistor 2N7002KW — N-Channel Enhancement Mode Field Effect Transistor
May 2011
2N7002KW
N-Channel Enhancement Mode Field Effect Transistor
Features
• Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Pb Free/RoHS Compliant • ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101
D
S G SOT-323
Marking : 7KW
Absolute Maximum Ratings * TA = 25°C unless otherwise noted
Symbol
Parameter |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |