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2N7002 даташитФункция этой детали – «N-channel Power Mosfet». |
2N7002 is a commonly used small signal MOSFET transistor. It is an N-channel enhancement mode MOSFET that is often used in low voltage and low current applications. |
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Номер в каталоге | Производители | Описание | |
2N7002 | Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 3 – JANUARY 1996 FEATURES * 60 Volt VCEO
2N7002
S
D PARTMARKING DETAIL – 702 G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j:T stg VALUE 60 115 800 ± 40 330 -55 to +150
SOT23 UNIT V mA mA V mW °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise |
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2N7002 | Vishay Siliconix |
N-Channel 60-V (D-S) MOSFET 2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
Part Number
2N7000 2N7002 VQ1000J VQ1000P BS170 60
V(BR)DSS Min (V)
rDS(on) Max (W)
5 @ VGS = 10 V 7.5 @ VGS = 10 V 5.5 @ VGS = 10 V 5.5 @ VGS = 10 V 5 @ VGS = 10 V
VGS(th) (V)
0.8 to 3 1 to 2.5 0.8 to 2.5 0.8 to 2.5 0.8 to 3
ID (A)
0.2 0.115 0.225 0.225 0.5
FEATURES
D D D D D Low On-Resistance: 2.5 W Low Threshold: 2.1 V Low Input Capacitance: 22 pF Fast Switching Speed: 7 ns Low Input and Output Leakage
BENEFITS
D D D |
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2N7002 | Unisonic Technologies |
N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
2N7002
0.3A, 60V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N7002 uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
FEATURES
* High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number 2N7002G-AE2-R Not |
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2N7002 | Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs Supertex inc.
2N7002
N-Channel Enhancement-Mode Vertical DMOS FETs
Features
►►Free from secondary breakdown ►►Low power drive requirement ►►Ease of paralleling ►►Low CISS and fast switching speeds ►►Excellent thermal stability ►►Integral source-drain diode ►►High input impedance and high gain
Applications
►►Motor controls ►► Converters ►► Amplifiers ►► Switches ►►Power supply circuits ►►Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar tr |
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2N7002 | ST Microelectronics |
0.20A, 60V, N-Channel MOSFET
2N7000 2N7002
N-CHANNEL 60V - 1.8Ω - 0.35A SOT23-3L - TO-92 STripFET™II MOSFET
Table 1: General Features
TYPE 2N7000 2N7002
Q Q Q
Figure 1: Package
RDS(on) Id 0.35 A 0.20 A
3 2 1
VDSS 60 V 60 V
< 5 Ω (@ 10V) < 5 Ω (@ 10V)
TYPICAL RDS(on) = 1.8Ω @10V LOW Qg LOW THRESHOLD DRIVE
APPLICATIONS Q HIGH SWITCHING APPLICATIONS
Figure 2: Internal Schematic Diagram
SOT23-3L
TO-92
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Table 2: Order Codes
SALES TYPE 2N7000 2N7002 MARKING 2N7000G ST2N PACKAGE TO-92 SOT23-3L PACKAGI |
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2N7002 | Silicon Standard |
N-channel MOSFET 2N7002
N-CHANNEL MOSFET
PRODUCT SUMMARY
SOT-23 Plastic-Encapsulate Transistors
FEATURES
High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability
Pb-free; RoHS-compliant
MARKING: 7002
MAXIMUM RATINGS (TA=25 oC unless otherwise noted)
Symbol VDS ID PD TJ Tstg
Parameter Drain-Source voltage Drain Current Power Dissipation Junction Temperature Storage Temperature
Value 60 115 225 150
-55-150
Units V mA
mW ℃ ℃
SOT-23
1. GATE 2. SOURCE |
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2N7002 | Ruichips |
N-Channel Advanced Power MOSFET 2N7002
N-Channel Advanced Power MOSFET
Features
• 60V/0.5A,
RDS (ON) =4500mΩ(Typ.)@VGS=10V RDS (ON) =5250mΩ(Typ.)@VGS=4.5V
• Low On-Resistance • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant)
Applications
• Power Management in Desktop Computer or DC/DC Converters
Pin Description
D
G S
SOT23
D G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
T |
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2N7002 | Philips |
60V, 180mA, N-channel Vertical D-MOS Transistor DISCRETE SEMICONDUCTORS
DATA SHEET
2N7002 N-channel vertical D-MOS transistor
Product specification File under Discrete Semiconductors, SC13b
April 1995
Philips Semiconductors
N-channel vertical D-MOS transistor
Product specification
2N7002
FEATURES • Direct interface to C-MOS, TTL,
etc. • High-speed switching • No secondary breakdown.
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. It is designed for use as a Surface Mounted Device (SMD) in thin and thick-film circuits |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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