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2N7002 даташит ( Даташиты, Даташиты )

Номер в каталоге Описание Производители PDF
124 2N7002   N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – JANUARY 1996 FEATURES * 60 Volt VCEO 2N7002 S D PARTMARKING DETAIL – 702 G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j:T stg VALUE 60 115 800 ± 40 330 -55 to +150 SOT23 UNIT V mA mA V mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise
Zetex Semiconductors
Zetex Semiconductors
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123 2N7002   N-Channel 60-V (D-S) MOSFET

2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number 2N7000 2N7002 VQ1000J VQ1000P BS170 60 V(BR)DSS Min (V) rDS(on) Max (W) 5 @ VGS = 10 V 7.5 @ VGS = 10 V 5.5 @ VGS = 10 V 5.5 @ VGS = 10 V 5 @ VGS = 10 V VGS(th) (V) 0.8 to 3 1 to 2.5 0.8 to 2.5 0.8 to 2.5 0.8 to 3 ID (A) 0.2 0.115 0.225 0.225 0.5 FEATURES D D D D D Low On-Resistance: 2.5 W Low Threshold: 2.1 V Low Input Capacitance: 22 pF Fast Switching Speed: 7 ns Low Input and Output Leakage BENEFITS D D D
Vishay Siliconix
Vishay Siliconix
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122 2N7002   N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 2N7002 0.3A, 60V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N7002 uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number 2N7002G-AE2-R Not
Unisonic Technologies
Unisonic Technologies
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121 2N7002   N-Channel Enhancement-Mode Vertical DMOS FETs

Supertex inc. 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Features ►►Free from secondary breakdown ►►Low power drive requirement ►►Ease of paralleling ►►Low CISS and fast switching speeds ►►Excellent thermal stability ►►Integral source-drain diode ►►High input impedance and high gain Applications ►►Motor controls ►► Converters ►► Amplifiers ►► Switches ►►Power supply circuits ►►Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar tr
Supertex  Inc
Supertex Inc
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120 2N7002   (2N7000 / 2N7002) N-Channel MOSFET

2N7000 2N7002 N-CHANNEL 60V - 1.8Ω - 0.35A SOT23-3L - TO-92 STripFET™II MOSFET Table 1: General Features TYPE 2N7000 2N7002 Q Q Q Figure 1: Package RDS(on) Id 0.35 A 0.20 A 3 2 1 VDSS 60 V 60 V < 5 Ω (@ 10V) < 5 Ω (@ 10V) TYPICAL RDS(on) = 1.8Ω @10V LOW Qg LOW THRESHOLD DRIVE APPLICATIONS Q HIGH SWITCHING APPLICATIONS Figure 2: Internal Schematic Diagram SOT23-3L TO-92 ww.Datasheet26.comom Table 2: Order Codes SALES TYPE 2N7000 2N7002 MARKING 2N7000G ST2N PACKAGE TO-92 SOT23-3L PACKAGI
ST Microelectronics
ST Microelectronics
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119 2N7002   N-channel MOSFET

2N7002 N-CHANNEL MOSFET PRODUCT SUMMARY SOT-23 Plastic-Encapsulate Transistors FEATURES High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability Pb-free; RoHS-compliant MARKING: 7002 MAXIMUM RATINGS (TA=25 oC unless otherwise noted) Symbol VDS ID PD TJ Tstg Parameter Drain-Source voltage Drain Current Power Dissipation Junction Temperature Storage Temperature Value 60 115 225 150 -55-150 Units V mA mW ℃ ℃ SOT-23 1. GATE 2. SOURCE
Silicon Standard
Silicon Standard
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118 2N7002   N-Channel Advanced Power MOSFET

2N7002 N-Channel Advanced Power MOSFET Features • 60V/0.5A, RDS (ON) =4500mΩ(Typ.)@VGS=10V RDS (ON) =5250mΩ(Typ.)@VGS=4.5V • Low On-Resistance • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management in Desktop Computer or DC/DC Converters Pin Description D G S SOT23 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage T
Ruichips
Ruichips
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117 2N7002   N-channel vertical D-MOS transistor

DISCRETE SEMICONDUCTORS DATA SHEET 2N7002 N-channel vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors N-channel vertical D-MOS transistor Product specification 2N7002 FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. It is designed for use as a Surface Mounted Device (SMD) in thin and thick-film circuits
Philips
Philips
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Номер в каталоге Описание Производители PDF
CD4515BC

The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors. These circuits are primarily used in decoding applications where low power dissipation and/or high noise immunity is required.

Fairchild Semiconductor
Fairchild Semiconductor
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HV101WU1-1E6

HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices. This module has a 10.1 inch diagonally measured active area with WUXGA resolutions (1920 horizontal by 1200 vertical pixel array).

HYDIS
HYDIS
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