DataSheet26.com


2N5415 даташит

Функция этой детали – «SilICon PNP Transistors».



Показать результаты поиска

scroll
Номер в каталоге Производители Описание PDF
2N5415 STMicroelectronics
STMicroelectronics
  SILICON PNP TRANSISTORS

2N5415 ® 2N5416 SILICON PNP TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s PNP TRANSISTORS DESCRIPTION The 2N5415, 2N5416 are high voltage silicon epitaxial planar PNP transistors in Jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCBO VCEO VEBO IC IB Ptot Ptot Ts
pdf
2N5415 NXP Semiconductors
NXP Semiconductors
  PNP high-voltage transistors

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N5415; 2N5416 PNP high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 21 Philips Semiconductors Product specification PNP high-voltage transistors FEATURES • Low current (max. 200 mA) • High voltage (max. 300 V). APPLICATIONS • Switching and linear amplification in military, industrial and consumer equipment. 1 handbook, halfpage 2N5415; 2N5416 PINNING PIN 1 2 3 emitter
pdf
2N5415 New Jersey Semiconductor
New Jersey Semiconductor
  Trans GP BJT PNP 200V 1A 3-Pin TO-5

pdf
2N5415 Motorola Semiconductors
Motorola Semiconductors
  PNP Transistor

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current —Collector Current Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Total Device Dissipation @ Ta = 50°C Derate above 50°C Operating and Storage Junction Temperature Range PIMP NPN Symbol 2N5415 2N5416 2N3439 2N3440 vCEO 200 300 350 250 v CBO 200 350 450 300 VEBO 4.0 6.0 7.0 7.0 'B 0.5 ic 1.0 Unit Vdc Vdc Vdc Adc Adc PD
pdf
2N5415 Microsemi
Microsemi
  PNP Silicon Low-Power Transistor

2N5415 – 2N5416 Compliant PNP Silicon Low-Power Transistor Qualified per MIL-PRF-19500/485 Qualified Levels: JAN, JANTX, JANTXV and JANS DESCRIPTION This family of 2N5415 and 2N5416 epitaxial planar transistors are military qualified up to a JANS level for high-reliability applications. These devices are also available in TO-39 and low profile U4 and UA packaging. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • JEDEC registered 2N5415 through 2N5416 series • JAN,
pdf
2N5415 Inchange Semiconductor
Inchange Semiconductor
  Silicon PNP Power Transistor

INCHANGE Semiconductor isc Silicon PNP Power Transistor DESCRIPTION ·PNP high-voltage transistor ·Low current (max. 200 mA) ·High voltage (max. 300 V) isc Product Specification 2N5415 APPLICATIONS ·Designed for Switching and linear amplification in military, industrial and consumer equipment applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 4V IC Collector Current-Continuous 0
pdf
2N5415 Comset Semiconductors
Comset Semiconductors
  (2N5415 / 2N5416) HIGH VOLTAGE Transistors

PNP 2N5415 – 2N5416 HIGH VOLTAGE TRANSISTORS The 2N5415 and 2N5416 are PNP transistors mounted in TO-39 metal case . They are intended for use in high-voltage switching and linear amplifier applications. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC ICM IBM Ratings Collector-Emitter Voltage (Ib = 0) Collector-Base Voltage (Ie = 0) Emitter-Base Voltage (Ic = 0) Collector Current www.DataSheet.net/ Value 2N5415 2N5416 2N5415 2N5416 2N5415 2N5416 2N5415 2N5416 2N5415 2N5416 2N5415 2N5416 2N5415
pdf
2N5415 Central Semiconductor
Central Semiconductor
  SILICON PNP TRANSISTORS

2N5415 2N5416 SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5415 and 2N5416 are silicon PNP transistors designed for consumer and industrial line-operated applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL T
pdf

[1]   [2]   



Последние обновления

scroll
Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

pdf
NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

pdf

Index :   

A    B    C    D    E    F    G    H    I    J  

  K    L    M    N    O    P    Q

DataSheet26.com      |     2020      |     Контакты