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2N5415 даташитФункция этой детали – «SilICon PNP Transistors». |
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Номер в каталоге | Производители | Описание | |
2N5415 | STMicroelectronics |
SILICON PNP TRANSISTORS 2N5415 ® 2N5416
SILICON PNP TRANSISTORS
s STMicroelectronics PREFERRED SALESTYPES
s PNP TRANSISTORS
DESCRIPTION The 2N5415, 2N5416 are high voltage silicon epitaxial planar PNP transistors in Jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO VCEO VEBO
IC IB Ptot Ptot Ts |
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2N5415 | NXP Semiconductors |
PNP high-voltage transistors DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D111
2N5415; 2N5416 PNP high-voltage transistors
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 21
Philips Semiconductors
Product specification
PNP high-voltage transistors
FEATURES • Low current (max. 200 mA) • High voltage (max. 300 V). APPLICATIONS • Switching and linear amplification in military, industrial and consumer equipment.
1 handbook, halfpage
2N5415; 2N5416
PINNING PIN 1 2 3 emitter |
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2N5415 | New Jersey Semiconductor |
Trans GP BJT PNP 200V 1A 3-Pin TO-5 |
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2N5415 | Motorola Semiconductors |
PNP Transistor MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
—Collector Current
Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
Total Device Dissipation
@ Ta = 50°C
Derate above 50°C
Operating and Storage Junction Temperature Range
PIMP
NPN
Symbol 2N5415 2N5416 2N3439 2N3440
vCEO 200 300 350 250
v CBO
200
350
450
300
VEBO
4.0
6.0
7.0
7.0
'B 0.5
ic 1.0
Unit Vdc Vdc Vdc Adc
Adc
PD |
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2N5415 | Microsemi |
PNP Silicon Low-Power Transistor 2N5415 – 2N5416
Compliant
PNP Silicon Low-Power Transistor
Qualified per MIL-PRF-19500/485
Qualified Levels: JAN, JANTX, JANTXV
and JANS
DESCRIPTION
This family of 2N5415 and 2N5416 epitaxial planar transistors are military qualified up to a JANS level for high-reliability applications. These devices are also available in TO-39 and low profile U4 and UA packaging.
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES • JEDEC registered 2N5415 through 2N5416 series • JAN, |
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2N5415 | Inchange Semiconductor |
Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION ·PNP high-voltage transistor ·Low current (max. 200 mA) ·High voltage (max. 300 V)
isc Product Specification
2N5415
APPLICATIONS ·Designed for Switching and linear
amplification in military, industrial and consumer equipment applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200 V
VCEO
Collector-Emitter Voltage
200 V
VEBO
Emitter-Base Voltage
4V
IC Collector Current-Continuous
0 |
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2N5415 | Comset Semiconductors |
(2N5415 / 2N5416) HIGH VOLTAGE Transistors PNP 2N5415 – 2N5416 HIGH VOLTAGE TRANSISTORS
The 2N5415 and 2N5416 are PNP transistors mounted in TO-39 metal case . They are intended for use in high-voltage switching and linear amplifier applications. Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO VCBO VEBO IC ICM IBM
Ratings
Collector-Emitter Voltage (Ib = 0) Collector-Base Voltage (Ie = 0) Emitter-Base Voltage (Ic = 0) Collector Current
www.DataSheet.net/
Value
2N5415 2N5416 2N5415 2N5416 2N5415 2N5416 2N5415 2N5416 2N5415 2N5416 2N5415 2N5416 2N5415 |
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2N5415 | Central Semiconductor |
SILICON PNP TRANSISTORS 2N5415 2N5416
SILICON PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5415 and 2N5416 are silicon PNP transistors designed for consumer and industrial line-operated applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature
ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL T |
[1]  [2]
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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