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2N5401 даташитФункция этой детали – «Amplifier Transistor». |
2N5401 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. It has a maximum collector current rating of 0.6A, a maximum collector-emitter voltage rating of 150V, and a maximum power dissipation rating of 630mW. |
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Номер в каталоге | Производители | Описание | |
2N5401 | WEITRON |
PNP Transistors PNP Transistors
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current
Total Device Dissipation TA=25 C
Junction Temperature
Storage, Temperature
Symbol VCEO VCBO VEBO
IC PD
Tj
Tstg
2N5401
TO-92
1. EMITTER 2. BASE 3. COLLECTOR
1 23
2N5401 -150 -160 -5.0 600
0.625
150
-55 to +150
Unit Vdc Vdc Vdc mAdc
W
C
C
ELECTRICAL CHARACTERISTICS
Characteristics Collector-Emitter Breakdown Voltage (IC= -1.0 mAdc, IB=0) Collector-Base Breakdown Voltag |
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2N5401 | Unisonic Technologies |
HIGH VOLTAGE SWITCHING TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2N5401
HIGH VOLTAGE SWITCHING TRANSISTOR
FEATURES
* Collector-emitter voltage: VCEO = -150V * High current gain
PNP SILICON TRANSISTOR
1
SOT-89
1
TO-92
*Pb-free plating product number:2N5401L
ORDERING INFORMATION
Order Number Normal Lead Free Plating 2N5401-x-AB3-R 2N5401L-x-AB3-R 2N5401-x-T92-B 2N5401L-x-T92-B 2N5401-x-T92-K 2N5401L-x-T92-K Package
SOT-89 TO-92 TO-92
Pin Assignment 1 2 3 B C E E B C E B C
Packing Tape Reel Tape Box Bulk
2N5401L-x-AB3-R (1)Pa |
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2N5401 | Transys |
PNP Transistor Transys
Electronics
LIMITED
TO-92 Plastic-Encapsulated Transistors
2N5401 TRANSISTOR (PNP)
FEATURE Power dissipation
PCM : 0.625 W (Tamb=25℃)
Collector current ICM : - 0.6 A
Collector-base voltage V(BR)CBO : -160 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
TO-92
1. EMITTER 2. BASE 3. COLLECTOR
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collec |
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2N5401 | Semtech Corporation |
PNP Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
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2N5401 | SeCoS |
PNP Plastic Encapsulated Transistor Elektronische Bauelemente
2N5401
-0.6 A, -160 V PNP Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
Switching and amplification in high voltage Applications such as telephony Low current (max. 600mA) High voltage (max. 160V)
Collector
3
TO-92
GH
J AD
B K
E CF
REF.
A B C D E F G H J K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
2
Base
1
Emitter
ABSOLUTE MAXIMUM |
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2N5401 | Samsung semiconductor |
-600mA, -150V, PNP EPITAXIAL SILICON TRANSISTOR |
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2N5401 | Philips |
PNP high-voltage transistors DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
2N5400; 2N5401 PNP high-voltage transistors
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04
1997 May 22
Philips Semiconductors
PNP high-voltage transistors
Product specification
2N5400; 2N5401
FEATURES • Low current (max. 300 mA) • High voltage (max. 150 V).
APPLICATIONS • General purpose switching and amplification • Telephony applications.
DESCRIPTION PNP high-voltage transistor in a TO-92; SOT54 p |
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2N5401 | ON Semiconductor |
150V, 0.6A, PNP Amplifier Transistor 2N5401
Amplifier Transistors
PNP Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C
VCEO VCBO VEBO
IC PD
150 Vdc 160 Vdc 5.0 Vdc 600 mAdc 625 mW 5.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 1.5 W
Derate above 25°C
12 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to +1 |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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