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2N5401 даташит

Функция этой детали – «Amplifier Transistor».



2N5401 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. It has a maximum collector current rating of 0.6A, a maximum collector-emitter voltage rating of 150V, and a maximum power dissipation rating of 630mW.

Features:

1. High voltage and current handling capabilities

2. Low noise and distortion for use in audio amplifier circuits

3. Low power dissipation for efficient operation

4. Availability and cost-effectiveness

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Номер в каталоге Производители Описание PDF
2N5401 WEITRON
WEITRON
  PNP Transistors

PNP Transistors ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Total Device Dissipation TA=25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg 2N5401 TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 23 2N5401 -150 -160 -5.0 600 0.625 150 -55 to +150 Unit Vdc Vdc Vdc mAdc W C C ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC= -1.0 mAdc, IB=0) Collector-Base Breakdown Voltag
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2N5401 Unisonic Technologies
Unisonic Technologies
  HIGH VOLTAGE SWITCHING TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 2N5401 HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain PNP SILICON TRANSISTOR 1 SOT-89 1 TO-92 *Pb-free plating product number:2N5401L ORDERING INFORMATION Order Number Normal Lead Free Plating 2N5401-x-AB3-R 2N5401L-x-AB3-R 2N5401-x-T92-B 2N5401L-x-T92-B 2N5401-x-T92-K 2N5401L-x-T92-K Package SOT-89 TO-92 TO-92 Pin Assignment 1 2 3 B C E E B C E B C Packing Tape Reel Tape Box Bulk 2N5401L-x-AB3-R (1)Pa
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2N5401 Transys
Transys
  PNP Transistor

Transys Electronics LIMITED TO-92 Plastic-Encapsulated Transistors 2N5401 TRANSISTOR (PNP) FEATURE Power dissipation PCM : 0.625 W (Tamb=25℃) Collector current ICM : - 0.6 A Collector-base voltage V(BR)CBO : -160 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ TO-92 1. EMITTER 2. BASE 3. COLLECTOR 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collec
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2N5401 Semtech Corporation
Semtech Corporation
  PNP Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications

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2N5401 SeCoS
SeCoS
  PNP Plastic Encapsulated Transistor

Elektronische Bauelemente 2N5401 -0.6 A, -160 V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Switching and amplification in high voltage Applications such as telephony Low current (max. 600mA) High voltage (max. 160V) Collector 3 TO-92 GH J AD B K E CF REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 - 2.42 2.66 0.36 0.76 2 Base 1 Emitter ABSOLUTE MAXIMUM
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2N5401 Samsung semiconductor
Samsung semiconductor
  -600mA, -150V, PNP EPITAXIAL SILICON TRANSISTOR

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2N5401 Philips
Philips
  PNP high-voltage transistors

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5400; 2N5401 PNP high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 22 Philips Semiconductors PNP high-voltage transistors Product specification 2N5400; 2N5401 FEATURES • Low current (max. 300 mA) • High voltage (max. 150 V). APPLICATIONS • General purpose switching and amplification • Telephony applications. DESCRIPTION PNP high-voltage transistor in a TO-92; SOT54 p
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2N5401 ON Semiconductor
ON Semiconductor
  150V, 0.6A, PNP Amplifier Transistor

2N5401 Amplifier Transistors PNP Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD 150 Vdc 160 Vdc 5.0 Vdc 600 mAdc 625 mW 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 W Derate above 25°C 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +1
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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