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2N4351 даташитФункция этой детали – «Trans Mosfet N-ch 25v 0.1a 4-pin To-72». |
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Номер в каталоге | Производители | Описание | |
2N4351 | New Jersey Semiconductor |
Trans MOSFET N-CH 25V 0.1A 4-Pin TO-72 |
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2N4351 | Motorola Semiconductors |
MOS FET "
MAXIMUM RATINGS
Rating
Symbol
Value
Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage*
vds vDg Vgs
25 30 30
Drain Current
@Total Device Dissipation T/ = 25°C
Derate above 25°C
@Total Device Dissipation Trj = 25°C
Derate above 25°C
id
Pd
Pd
30
300
1.7
800 4.56
Junction Temperature Range
Tj 175
Storage Temperature Range
Tstg
-65 to +175
'Transient potentials of ±75 Volt will not cause gate-oxide failure
Unit
Vdc
Vdc
Vdc mAdc
mW
mW/°C
mW
mW/°C
°C
°C
2N4351
CASE 20-03, STYLE 2
TO-72 (T |
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2N4351 | Micross |
Amplifier/Switch 2N4351 N-CHANNEL MOSFET
The 2N4351 is an enhancement mode N-Channel Mosfet
The 2N4351 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications. (See Packaging Information). FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT HIGH GAIN ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) ID = 100mA gfS = 1000µS
Maximu |
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2N4351 | Linear Integrated Systems |
N-CHANNEL MOSFET ENHANCEMENT MODE 2N4351
Linear Integrated Systems
FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT HIGH GAIN ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation Maximum Current Drain to Source Maximum Voltages Drain to Body Drain to Source Peak Gate to Source2 25V 25V ±125V 100mA * Body tied to Case. 375mW -65 to +200 °C -55 to +150 °C
1
N-CHANNEL MOSFET ENHANCEMENT MODE
ID = 100mA |
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2N4351 | Calogic LLC |
N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch CORPORATION
N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch
2N4351
FEATURES
• Low ON Resistance • Low Capacitance Gain • High • High Gate Breakdown Voltage • Low Threshold Voltage
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Drain-Source Voltage or Drain-Body Voltage . . . . . . . . . . 25V Peak Gate-Source Voltage (Note 1) . . . . . . . . . . . . . . . ±125V Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Storage Temp |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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