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2N4032 даташит ( Даташиты, Даташиты )

Номер Номер в каталоге Описание Производители PDF
9 2N4032   Bipolar PNP Device

2N4032 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. (00.0.8395)max. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2 13 45° 2.54 (0.100) 1 – Emitter TO39 (TO205AD) PINOUTS 2 – Base 3 – Collector Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device. VCEO = 60V IC = 1A All Semelab hermetically sealed products can be processed in accordance with
Seme LAB
Seme LAB
2N4032 pdf Даташит
8 2N4032   Trans GP BJT PNP 60V 3-Pin TO-39 Box

New Jersey Semiconductor
New Jersey Semiconductor
2N4032 pdf Даташит
7 2N4032   Power Transistor

Power Transistor Description: A Silicon PNP transistor in a TO-39 type case designed primarily for amplifier and switching applications. This device features high breakdown voltage, low leakage current. Low capacity, and beta useful over an extremely wide current range. Pin Configurations: 1. Emitter 2. Base 3. Collector Maximum Ratings: Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Continuous Collector Current Total Device Dissipation -(TA = +25°C), Derate Above 25°C Total De
Multicomp
Multicomp
2N4032 pdf Даташит
6 2N4032   GENERAL PURPOSE TRANSISTOR

MAXIMUM RATINGS Rating 2N4026/28 2N4027/29 Symbol 2N4030/32 2N4031/33 Unit Collector-Emitter Voltage) 1) VCEO 60 80 Vdc Collector-Base Voltage VCBO 60 80 Vdc Emitter-Base Voltage VEBO 5.0 5.0 Vdc —Collector Current Continuous @Total Device Dissipation Ta = 25°C Derate above 25°C Total Device Dissipation (a Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range "C PD PD Tj. Tstg 2N40262N4029 2N40302N4033 1.0 1.0 .5 2.85 1.25 7.15 2.0 11.4 7.0 40 - 65 to + 200 Adc W mW
Motorola
Motorola
2N4032 pdf Даташит
5 2N4032   PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES

Micro Electronics
Micro Electronics
2N4032 pdf Даташит
4 2N4032   (2N4030 - 2N4033) General Purpose Amplifier and Switches

PNP 2N4030 – 2N4031 – 2N4032 – 2N4033 GENERAL PURPOSE AMPLIFIERS AND SWITCHES They are silicon planar epitaxial PNP transistors mounted in TO-39 metal package. They are intended for large signal, low noise industrial applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Collector-Base Voltage IE = 0 Ratings 2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 @ Tcase= < 25° @ Tamb= < 25° www.DataSheet.net/ Value 60 80 60 80 60 80 60 80 5
Comset Semiconductor
Comset Semiconductor
2N4032 pdf Даташит
3 2N4032   Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued) TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ (µA) *ICEO **ICES ***ICEV ****ICER MIN 5.0 5.0 5.0 5.0 7.0 7.0 6.0 6.0 7.0 7.0 7.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 7.0 6.0 5.0 5.0 5.0 5.0 3.5 6.0 --5.0 5.0 6.0 6.0 6.0 5.0 5.0 7.0 7.0 4.0 4.0 0.50 0.50 0.50 0.50 0.20 0.25 1.70 1.70 100 100 100 100 100 100 1.00 0.50 0.10 10 0.25 0.20 0.025 0.025 0.025 0.025 20* 0.10 0.50 0.50 100 0.25*** 1.00** 1.00** 1.00** 0.10 0.10 0.10 0.10 0.50 0.50 50 60 50 60 60 60 40 60 40 6
Central Semiconductor Corp
Central Semiconductor Corp
2N4032 pdf Даташит
2 2N4032   PNP SILICON PLANAR TRANSISTORS

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTORS 2N4030, 2N4031 2N4032, 2N4033 TO-39 Metal Can Package 2N4030 And 2N4033 ARE PNP SMALL SIGNAL GENERAL PURPOSE AMLIFIER, TRANSISTORS. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL 2N4030,32 Collector Emitter Voltage VCEO 60 Collector Base Voltage VCBO 60 Emitter Base Voltage VEBO Collector Current ICM Power Dissipation @ Ta=25ºC PD Derate Above 25
CDIL
CDIL
2N4032 pdf Даташит


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свойства компонента (features), его основные параметры (quick reference data), обозначение на принципиальных схемах (symbol), краткое описание (general description).



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