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2N3439 даташитФункция этой детали – «High Voltage Amplifiers». |
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Номер в каталоге | Производители | Описание | |
2N3439 | TRANSYS |
(2N3439 / 2N3440) NPN HIGH VOLTAGE SILICON TRANSISTORS Transys
Electronics
L I M I T E D
NPN HIGH VOLTAGE SILICON TRANSISTORS
2N3439 2N3440 TO-39
High Voltage Silicon Planar Transistors used in High Voltage & High Power Amplifier Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C unless otherwise specified) DESCRIPTION SYMBOL 2N3439 VCEO 350 Collector -Emitter Voltage VCBO 450 Collector -Base Voltage VEBO 7.0 Emitter -Base Voltage IC 1.0 Collector Current Continuous IB 0.5 Base Current PD 1.0 Power Dissipation@ Ta=25 degC 5.7 Derate Above 25 deg C PD 5.0 Power Dissipatio |
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2N3439 | STMicroelectronics |
SILICON NPN TRANSISTORS 2N3439 ® 2N3440
SILICON NPN TRANSISTORS
s STMicroelectronics PREFERRED SALESTYPES
s NPN TRANSISTOR
DESCRIPTION The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO VCEO VEBO
IC IB Ptot Ptot Tstg Tj
Coll |
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2N3439 | Seme LAB |
HIGH VOLTAGE NPN TRANSISTORS 2N3439 2N3440
MECHANICAL DATA Dimensions in mm (inches)
8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335)
HIGH VOLTAGE NPN TRANSISTORS
FEATURES
4.19 (0.165) 4.95 (0.195)
12.70 (0.500) min.
0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia.
• DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTOR • HIGH VOLTAGE
5.08 (0.200) typ.
APPLICATIONS:
2 1
0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2.54 (0.100)
3
These devices are particularly suited as drivers in high-voltage low current inverters, switing and series r |
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2N3439 | ON Semiconductor |
Low Power Transistor 2N3439
Product Preview Low Power Transistor
NPN Silicon
Features
• MIL−PRF−19500/368 Qualified • Available as JAN, JANTX, and JANTXV • Hermetically Sealed Commercial Product with Option for Military
Temperature Range Screening
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Value
Collector −Emitter Voltage
VCEO
350
Collector −Base Voltage Emitter −Base Voltage
VCBO VEBO
450 7.0
Collector Current − Continuous
IC 1.0
Total Device Dissipation @ TA = 25°C
PT 800
Tot |
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2N3439 | New Jersey Semiconductor |
Trans GP BJT NPN 350V 1A 3-Pin TO-39 Box |
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2N3439 | Motorola Semiconductors |
NPN Transistor MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
—Collector Current
Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
Total Device Dissipation
@ Ta = 50°C
Derate above 50°C
Operating and Storage Junction Temperature Range
PIMP
NPN
Symbol 2N5415 2N5416 2N3439 2N3440
vCEO 200 300 350 250
v CBO
200
350
450
300
VEBO
4.0
6.0
7.0
7.0
'B 0.5
ic 1.0
Unit Vdc Vdc Vdc Adc
Adc
PD |
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2N3439 | Microsemi Corporation |
NPN LOW POWER SILICON TRANSISTOR TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/368 Devices 2N3439 2N3439L 2N3440 2N3440L Qualified Level JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation
Symbol
VCEO VCBO VEBO IC PT Top, Tstg
2N3439
350 450
2N3440
250 300
Units
Vdc Vdc Vdc Adc W W/0C 0 C
@TA = 250C(1) @TC = 250C(2) Operating & Storage Temperature Range 1)
7.0 1.0 0.8 5.0 -55 to +200
TO- 5* 2N3439L, 2N3440L
2)
Derate |
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2N3439 | Comset Semiconductor |
(2N3439 / 2N3440) High Voltage Transistor NPN 2N3439 – 2N3440 HIGH VOLTAGE TRANSISTOR
C
The 2N3439 and 2N3440 are high voltage silicon epitaxial transistors mounted in TO-39 metal package. They are intended for use in power amplifier, in consumer and industrial line-operated applications. These devices are particularity suited as drives in high voltage low current inverters, switching and series regulators. Compliance to RoHS.
B
E
ABSOLUTE MAXIMUM RATINGS Value 2N3439
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Symbol
VCEO VCBO VEBO IC IB PD TJ TStg
Ratings
Collector-Emitter Vo |
[1]  [2]
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |