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2N3439 даташит

Функция этой детали – «High Voltage Amplifiers».



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Номер в каталоге Производители Описание PDF
2N3439 TRANSYS
TRANSYS
  (2N3439 / 2N3440) NPN HIGH VOLTAGE SILICON TRANSISTORS

Transys Electronics L I M I T E D NPN HIGH VOLTAGE SILICON TRANSISTORS 2N3439 2N3440 TO-39 High Voltage Silicon Planar Transistors used in High Voltage & High Power Amplifier Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C unless otherwise specified) DESCRIPTION SYMBOL 2N3439 VCEO 350 Collector -Emitter Voltage VCBO 450 Collector -Base Voltage VEBO 7.0 Emitter -Base Voltage IC 1.0 Collector Current Continuous IB 0.5 Base Current PD 1.0 Power Dissipation@ Ta=25 degC 5.7 Derate Above 25 deg C PD 5.0 Power Dissipatio
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2N3439 STMicroelectronics
STMicroelectronics
  SILICON NPN TRANSISTORS

2N3439 ® 2N3440 SILICON NPN TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s NPN TRANSISTOR DESCRIPTION The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCBO VCEO VEBO IC IB Ptot Ptot Tstg Tj Coll
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2N3439 Seme LAB
Seme LAB
  HIGH VOLTAGE NPN TRANSISTORS

2N3439 2N3440 MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) HIGH VOLTAGE NPN TRANSISTORS FEATURES 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. • DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTOR • HIGH VOLTAGE 5.08 (0.200) typ. APPLICATIONS: 2 1 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 3 These devices are particularly suited as drivers in high-voltage low current inverters, switing and series r
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2N3439 ON Semiconductor
ON Semiconductor
  Low Power Transistor

2N3439 Product Preview Low Power Transistor NPN Silicon Features • MIL−PRF−19500/368 Qualified • Available as JAN, JANTX, and JANTXV • Hermetically Sealed Commercial Product with Option for Military Temperature Range Screening MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Collector −Emitter Voltage VCEO 350 Collector −Base Voltage Emitter −Base Voltage VCBO VEBO 450 7.0 Collector Current − Continuous IC 1.0 Total Device Dissipation @ TA = 25°C PT 800 Tot
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2N3439 New Jersey Semiconductor
New Jersey Semiconductor
  Trans GP BJT NPN 350V 1A 3-Pin TO-39 Box

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2N3439 Motorola Semiconductors
Motorola Semiconductors
  NPN Transistor

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current —Collector Current Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Total Device Dissipation @ Ta = 50°C Derate above 50°C Operating and Storage Junction Temperature Range PIMP NPN Symbol 2N5415 2N5416 2N3439 2N3440 vCEO 200 300 350 250 v CBO 200 350 450 300 VEBO 4.0 6.0 7.0 7.0 'B 0.5 ic 1.0 Unit Vdc Vdc Vdc Adc Adc PD
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2N3439 Microsemi Corporation
Microsemi Corporation
  NPN LOW POWER SILICON TRANSISTOR

TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/368 Devices 2N3439 2N3439L 2N3440 2N3440L Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC PT Top, Tstg 2N3439 350 450 2N3440 250 300 Units Vdc Vdc Vdc Adc W W/0C 0 C @TA = 250C(1) @TC = 250C(2) Operating & Storage Temperature Range 1) 7.0 1.0 0.8 5.0 -55 to +200 TO- 5* 2N3439L, 2N3440L 2) Derate
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2N3439 Comset Semiconductor
Comset Semiconductor
  (2N3439 / 2N3440) High Voltage Transistor

NPN 2N3439 – 2N3440 HIGH VOLTAGE TRANSISTOR C The 2N3439 and 2N3440 are high voltage silicon epitaxial transistors mounted in TO-39 metal package. They are intended for use in power amplifier, in consumer and industrial line-operated applications. These devices are particularity suited as drives in high voltage low current inverters, switching and series regulators. Compliance to RoHS. B E ABSOLUTE MAXIMUM RATINGS Value 2N3439 www.DataSheet.net/ Symbol VCEO VCBO VEBO IC IB PD TJ TStg Ratings Collector-Emitter Vo
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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