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2N3055 даташит

Функция этой детали – «NPN SilICon Darlingtons».



2N3055 is a type of bipolar junction transistor (BJT) that is commonly used in power amplifiers, voltage regulators, and other high-current applications.

The 2N3055 is widely used in audio power amplifiers, where it is often paired with a complementary PNP transistor such as the MJ2955. It is also used in power supplies, voltage regulators, and other applications where high current and voltage ratings are required.

Features:

1. High current rating of 15 amperes allows it to handle high-power applications

2. High current gain allows for efficient power amplification

3. Low collector-emitter saturation voltage reduces power dissipation

4. Wide availability and low cost

5. Robust and reliable design

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Номер в каталоге Производители Описание PDF
2N3055 Unisonic Technologies
Unisonic Technologies
  SILICON NPN TRANSISTORS

UNISONIC TECHNOLOGIES CO., LTD 2N3055 PNP SILICON TRANSISTOR SILICON NPN TRANSISTORS  DESCRIPTION The UTC 2N3055 is a silicon NPN transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.  ORDERING INFORMATION Ordering Number 2N3055L-T30-Y Note: Pin Assignment: E: Emitter B: Base C: Case Package TO-3 Pin Assignment 123 BEC Packing Tray  MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., L
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2N3055 TRANSYS
TRANSYS
  SILICON PLANAR POWER TRANSISTORS

Transys Electronics L I M I T E D SILICON PLANAR POWER TRANSISTORS 2N3055 NPN MJ2955 PNP TO-3 Metal Can Package General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage(RBE=100Ω) Emitter Base Voltage Collector Current Continuous Base Current Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) 1.52 ºC
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2N3055 Toshiba
Toshiba
  Silicon NPN Triple Diffused Type

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2N3055 TAITRON
TAITRON
  NPN Power Transistor

Power Transistor (NPN) Features • General Purpose Switching and Amplifier Applications • RoHS Compliant Power Transistor (NPN) 2N3055 Mechanical Data Case: Terminals: Weight: TO-3, Metal Can Package Solderable per MIL-STD-202, Method 208 20 grams (approx) TO-3 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VCER Collector-Emitter Voltage (RBE=100Ω) VEBO Emitter-Base Voltage IC Collector Current Continuous IB Ba
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2N3055 STMicroelectronics
STMicroelectronics
  60V, 15A, NPN SILICON POWER TRANSISTORS

TAB 1 2 TO-3 Figure 1. Internal schematic diagram 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features • Low collector-emitter saturation voltage • Complementary NPN - PNP transistors Applications • General purpose • Audio amplifier Description The devices are manufactured in planar technology with “base island” layout and are suitable for audio, power linear and switching applications. Order code 2N3055 MJ2955 Table 1. Device summary Marking Package 2N3055 MJ2955 TO-3
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2N3055 Siemens Semiconductor Group
Siemens Semiconductor Group
  NPN TRANSISTOR FOR POWERFUL AF OUTPUT STAGES

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2N3055 Seme LAB
Seme LAB
  (2N3055 / 2N3056) Bipolar NPN Device

2N3055/6 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 100V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 15A All Semelab hermetically sealed products can be processed i
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2N3055 Seme LAB
Seme LAB
  (2N3055 / 2N3056) Bipolar NPN Device

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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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