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2N3055 даташитФункция этой детали – «NPN SilICon Darlingtons». |
2N3055 is a type of bipolar junction transistor (BJT) that is commonly used in power amplifiers, voltage regulators, and other high-current applications. |
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Номер в каталоге | Производители | Описание | |
2N3055 | Unisonic Technologies |
SILICON NPN TRANSISTORS UNISONIC TECHNOLOGIES CO., LTD
2N3055
PNP SILICON TRANSISTOR
SILICON NPN TRANSISTORS
DESCRIPTION
The UTC 2N3055 is a silicon NPN transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.
ORDERING INFORMATION
Ordering Number
2N3055L-T30-Y Note: Pin Assignment: E: Emitter B: Base
C: Case
Package TO-3
Pin Assignment 123 BEC
Packing Tray
MARKING
www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., L |
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2N3055 | TRANSYS |
SILICON PLANAR POWER TRANSISTORS Transys
Electronics
L I M I T E D
SILICON PLANAR POWER TRANSISTORS
2N3055 NPN MJ2955 PNP TO-3 Metal Can Package
General Purpose Switching and Amplifier Applications
ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage(RBE=100Ω) Emitter Base Voltage Collector Current Continuous Base Current Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) 1.52 ºC |
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2N3055 | Toshiba |
Silicon NPN Triple Diffused Type |
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2N3055 | TAITRON |
NPN Power Transistor Power Transistor (NPN)
Features
• General Purpose Switching and Amplifier Applications • RoHS Compliant
Power Transistor (NPN) 2N3055
Mechanical Data
Case: Terminals:
Weight:
TO-3, Metal Can Package Solderable per MIL-STD-202, Method 208 20 grams (approx)
TO-3
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VCER
Collector-Emitter Voltage (RBE=100Ω)
VEBO
Emitter-Base Voltage
IC Collector Current Continuous
IB Ba |
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2N3055 | STMicroelectronics |
60V, 15A, NPN SILICON POWER TRANSISTORS TAB
1 2
TO-3 Figure 1. Internal schematic diagram
2N3055, MJ2955
Complementary power transistors
Datasheet - production data
Features
• Low collector-emitter saturation voltage • Complementary NPN - PNP transistors
Applications
• General purpose • Audio amplifier
Description
The devices are manufactured in planar technology with “base island” layout and are suitable for audio, power linear and switching applications.
Order code 2N3055 MJ2955
Table 1. Device summary
Marking
Package
2N3055 MJ2955
TO-3
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2N3055 | Siemens Semiconductor Group |
NPN TRANSISTOR FOR POWERFUL AF OUTPUT STAGES |
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2N3055 | Seme LAB |
(2N3055 / 2N3056) Bipolar NPN Device 2N3055/6
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.197)
22.23 (0.875) max.
16.64 (0.655) 17.15 (0.675)
1
2
Bipolar NPN Device. VCEO = 100V
3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50)
IC = 15A
All Semelab hermetically sealed products can be processed i |
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2N3055 | Seme LAB |
(2N3055 / 2N3056) Bipolar NPN Device |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |