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2N2102 даташит

Функция этой детали – «Amplifier Transistor».



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Номер в каталоге Производители Описание PDF
2N2102 STMicroelectronics
STMicroelectronics
  EPITAXIAL PLANAR NPN

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2N2102 Semicoa
Semicoa
  (2N2xxx) NPN General Purpose Medium Speed Amplifiers

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2N2102 Seme LAB
Seme LAB
  Bipolar NPN Device

2N2102 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. (00.0.8395)max. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2 13 45° 2.54 (0.100) 1 – Emitter TO39 (TO205AD) PINOUTS 2 – Base 3 – Collector Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. VCEO = 65V IC = 1A All Semelab hermetically sealed products can be processed in accordance with
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2N2102 New Jersey Semiconductor
New Jersey Semiconductor
  Trans GP BJT NPN 65V 1A 3-Pin TO-39 Box

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2N2102 Multicomp
Multicomp
  Transistor

Transistor Description: This is a Silicon NPN transistor in a TO-39 type case designed primarily for amplifier and switching applications. This device features high breakdown voltage low leakage current, low capacity, and beta useful over an extremely wide current range. Absolute Maximum Ratings: Collector-Base Voltage, Vcbo : 120V Collector-Emitter Voltage, Vceo : 65V Emitter-Base Voltage, Vebo : 7V Continuous Collector Current, Ic : 1A Total Device Dissipation (Ta = +25ºC), Pd : 800mW Derate above 25ºC
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2N2102 Motorola Semiconductors
Motorola Semiconductors
  AMPLIFIER TRANSISTOR

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage, Rgg « 10 Ohms Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation TA = 25°C Derate above 25°C Total Device Dissipation (a Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCER VCBO VEBO 'C PD PD T J, Tst g Value 65 80 120 7.0 1.0 1.0 5.71 5.0 28.6 -65 to + 200 Unit Vdc Vdc Vdc Vdc Adc Watt mWfC Watts mW/°C °C 2N2102 CASE 79-02, STYLE 1 TO-39 (
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2N2102 Micro Electronics
Micro Electronics
  COMPLEMEMTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES

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2N2102 Comset Semiconductor
Comset Semiconductor
  Medium Power Amplifier & Switch

NPN 2N2102 MEDIUM POWER AMPLIFIER & SWITCH The 2N2102 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. They are intended for a wide variety of small-signall and medium power applications in military and industrial equipments. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VCER VEBO IC PD TJ TStg Ratings Collector-Emitter Voltage (IB = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (RBE = 10 Ω) Emitter-Base Voltage Collector Current www.DataSheet.net/ Value 65 120
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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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