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2N2102 даташитФункция этой детали – «Amplifier Transistor». |
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Номер в каталоге | Производители | Описание | |
2N2102 | STMicroelectronics |
EPITAXIAL PLANAR NPN |
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2N2102 | Semicoa |
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2N2102 | Seme LAB |
Bipolar NPN Device 2N2102
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
6.10 (0.240) 6.60 (0.260)
12.70 (0.500)
min.
(00.0.8395)max.
0.41 (0.016) 0.53 (0.021)
dia.
5.08 (0.200) typ.
0.74 (0.029) 1.14 (0.045)
0.71 (0.028) 0.86 (0.034)
2 13
45°
2.54 (0.100)
1 – Emitter
TO39 (TO205AD) PINOUTS
2 – Base
3 – Collector
Bipolar NPN Device in a Hermetically sealed TO39
Metal Package.
Bipolar NPN Device.
VCEO = 65V IC = 1A
All Semelab hermetically sealed products can be processed in accordance with |
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2N2102 | New Jersey Semiconductor |
Trans GP BJT NPN 65V 1A 3-Pin TO-39 Box |
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2N2102 | Multicomp |
Transistor Transistor
Description:
This is a Silicon NPN transistor in a TO-39 type case designed primarily for amplifier and switching applications. This device features high breakdown voltage low leakage current, low capacity, and beta useful over an extremely wide current range.
Absolute Maximum Ratings:
Collector-Base Voltage, Vcbo
: 120V
Collector-Emitter Voltage, Vceo
: 65V
Emitter-Base Voltage, Vebo
: 7V
Continuous Collector Current, Ic
: 1A
Total Device Dissipation (Ta = +25ºC), Pd
: 800mW
Derate above 25ºC
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2N2102 | Motorola Semiconductors |
AMPLIFIER TRANSISTOR MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage, Rgg « 10 Ohms
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation TA = 25°C
Derate above 25°C Total Device Dissipation (a Tc = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol VCEO VCER VCBO VEBO
'C
PD
PD
T J,
Tst g
Value 65 80 120
7.0 1.0 1.0 5.71 5.0 28.6
-65 to + 200
Unit Vdc Vdc Vdc Vdc
Adc Watt
mWfC
Watts mW/°C
°C
2N2102
CASE 79-02, STYLE 1
TO-39 ( |
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2N2102 | Micro Electronics |
COMPLEMEMTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES |
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2N2102 | Comset Semiconductor |
Medium Power Amplifier & Switch NPN 2N2102 MEDIUM POWER AMPLIFIER & SWITCH
The 2N2102 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. They are intended for a wide variety of small-signall and medium power applications in military and industrial equipments. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO VCBO VCER VEBO IC PD TJ TStg
Ratings
Collector-Emitter Voltage (IB = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (RBE = 10 Ω) Emitter-Base Voltage Collector Current
www.DataSheet.net/
Value
65 120 |
[1]  [2]
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |